scholarly journals Organic Field-Effect Transistor Memory Device Based on an Integrated Carbon Quantum Dots/Polyvinyl Pyrrolidone Hybrid Nanolayer

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 753
Author(s):  
Wenting Zhang ◽  
Xiaoxing Guo ◽  
Jinchao Yin ◽  
Jianhong Yang

In this work, we present a pentacene-based organic field-effect transistor memory (OFETM) device, which employs one-step microwave-assisted hydrothermal carbon quantum dots (CQDs) embedded in a polyvinyl pyrrolidone (PVP) matrix, to form an integrated hybrid nanolayer as the charge trapping layer. The as-prepared CQDs are quasi-spherical amorphous C, with sizes ranging from 5 to 20 nm, with a number of oxygen-containing groups and likely some graphite-like domains that produce CQDs with excellent electron-withdrawing characteristics. The incorporation of CQDs into PVP dielectric materials results in a bidirectional storage property. By optimizing the concentration of CQDs embedded into the PVP matrix, the OFETM shows excellent memory characteristics with a large memory window of 8.41 V under a programming/erasing (P/E) voltage of ± 60 V and a retention time of up to 104 s.

2019 ◽  
Vol 28 (8) ◽  
pp. 086801 ◽  
Author(s):  
Wen-Ting Zhang ◽  
Fen-Xia Wang ◽  
Yu-Miao Li ◽  
Xiao-Xing Guo ◽  
Jian-Hong Yang

2008 ◽  
Vol 1071 ◽  
Author(s):  
Sambit Pattnaik ◽  
Ashish Garg ◽  
Monica Katiyar

AbstractHere, we report fabrication of an organic field effect transistor that can be used as a memory device. We have evaluated inorganic ferroelectric insulator manganese doped barium titanate(BTO), organic poly(vinylidene fluoride trifluoroethylene) P(VDF-TrFE), and their composite. The inorganic and organic ferroelectrics were fabricated using low cost process of spin coating followed by annealing to enhance crystallinity. The ferroelectric phase evolution is assessed by X-ray diffraction, MIM structure is used to study polarization behaviour and leakage current. Finally, OFETs are fabricated using thermal evaporation of 75 nm of pentacene. Gold electrodes of 70 nm were evaporated for the top contact devices keeping W/L=40. The OFET devices, for BTO/P(VDF-TrFE) composite insulator, showed memory effect with shift in threshold voltage of 8.5 ± 1.5V.


2014 ◽  
Vol 554 ◽  
pp. 189-193 ◽  
Author(s):  
Keanchuan Lee ◽  
Martin Weis ◽  
Xiangyu Chen ◽  
Dai Taguchi ◽  
Takaaki Manaka ◽  
...  

2017 ◽  
Vol 5 (42) ◽  
pp. 10955-10964 ◽  
Author(s):  
Mingyuan Pei ◽  
Albert S. Lee ◽  
Seung Sang Hwang ◽  
Hoichang Yang

Ladder-like polysilsesquioxanes with controlled side-substituents were synthesized and optimized as dielectric materials for flexible OFETs.


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