Metal nanoparticles in organic field-effect transistor: Transition from charge trapping to conduction mechanism

2014 ◽  
Vol 554 ◽  
pp. 189-193 ◽  
Author(s):  
Keanchuan Lee ◽  
Martin Weis ◽  
Xiangyu Chen ◽  
Dai Taguchi ◽  
Takaaki Manaka ◽  
...  
2019 ◽  
Vol 28 (8) ◽  
pp. 086801 ◽  
Author(s):  
Wen-Ting Zhang ◽  
Fen-Xia Wang ◽  
Yu-Miao Li ◽  
Xiao-Xing Guo ◽  
Jian-Hong Yang

2019 ◽  
Vol 11 (43) ◽  
pp. 40366-40371 ◽  
Author(s):  
Lin-Xi Zhang ◽  
Xu Gao ◽  
Jing-Jing Lv ◽  
Ya-Nan Zhong ◽  
Chao Xu ◽  
...  

Author(s):  
Cristian Ravariu ◽  
Daniela Dragomirescu ◽  
Florin Babarada ◽  
Dan Prelipceanu ◽  
Bogdan Patrichi ◽  
...  

2007 ◽  
Vol 555 ◽  
pp. 125-130
Author(s):  
Rajko M. Šašić ◽  
P.M. Lukić

Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density μ(T,E,NT) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.


Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 753
Author(s):  
Wenting Zhang ◽  
Xiaoxing Guo ◽  
Jinchao Yin ◽  
Jianhong Yang

In this work, we present a pentacene-based organic field-effect transistor memory (OFETM) device, which employs one-step microwave-assisted hydrothermal carbon quantum dots (CQDs) embedded in a polyvinyl pyrrolidone (PVP) matrix, to form an integrated hybrid nanolayer as the charge trapping layer. The as-prepared CQDs are quasi-spherical amorphous C, with sizes ranging from 5 to 20 nm, with a number of oxygen-containing groups and likely some graphite-like domains that produce CQDs with excellent electron-withdrawing characteristics. The incorporation of CQDs into PVP dielectric materials results in a bidirectional storage property. By optimizing the concentration of CQDs embedded into the PVP matrix, the OFETM shows excellent memory characteristics with a large memory window of 8.41 V under a programming/erasing (P/E) voltage of ± 60 V and a retention time of up to 104 s.


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