scholarly journals Memory Devices via Unipolar Resistive Switching in Symmetric Organic–Inorganic Perovskite Nanoscale Heterolayers

2020 ◽  
Vol 3 (12) ◽  
pp. 11889-11896
Author(s):  
Xianxi Yu ◽  
Tangyao Shen ◽  
Chunqin Zhu ◽  
Qi Zeng ◽  
Anran Yu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Unipolar Resistive Switching

All-inorganic perovskite Cs4PbBr6 thin films in optoelectronic resistive switching memory devices with a logic application

2019 ◽  
Vol 45 (5) ◽  
pp. 5724-5730 ◽  
Author(s):  
Huaizu Cai ◽  
Meimei Lao ◽  
Jun Xu ◽  
Yukai Chen ◽  
Chujie Zhong ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Resistive Switching Memory ◽  
Switching Memory

Light assisted multilevel resistive switching memory devices based on all-inorganic perovskite quantum dots

2019 ◽  
Vol 114 (18) ◽  
pp. 181103 ◽  
Author(s):  
Zhiliang Chen ◽  
Yating Zhang ◽  
Yu Yu ◽  
Mingxuan Cao ◽  
Yongli Che ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Resistive Switching Memory ◽  
Perovskite Quantum Dots ◽  
Switching Memory

Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices

2012 ◽  
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pp. 063501 ◽  
Author(s):  
Wei Hu ◽  
Xinman Chen ◽  
Guangheng Wu ◽  
Yanting Lin ◽  
Ni Qin ◽  
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Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Unipolar Resistive Switching

scholarly journals Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

2012 ◽  
Vol 152 (17) ◽  
pp. 1630-1634 ◽  
Author(s):  
Feng Zhang ◽  
Xiaomin Li ◽  
Xiangdong Gao ◽  
Liang Wu ◽  
Fuwei Zhuge ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Defect Content ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching
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