Multilevel Programming and Light-Assisted Resistive Switching in a Halide-Tunable All-Inorganic Perovskite Cube for Flexible Memory Devices

2020 ◽  
Vol 2 (11) ◽  
pp. 3667-3677
Author(s):  
Tufan Paul ◽  
Pranab Kumar Sarkar ◽  
Soumen Maiti ◽  
Kalyan Kumar Chattopadhyay
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Multilevel Programming ◽  
Inorganic Perovskite

All-inorganic perovskite Cs4PbBr6 thin films in optoelectronic resistive switching memory devices with a logic application

2019 ◽  
Vol 45 (5) ◽  
pp. 5724-5730 ◽  
Author(s):  
Huaizu Cai ◽  
Meimei Lao ◽  
Jun Xu ◽  
Yukai Chen ◽  
Chujie Zhong ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Memory Devices via Unipolar Resistive Switching in Symmetric Organic–Inorganic Perovskite Nanoscale Heterolayers

2020 ◽  
Vol 3 (12) ◽  
pp. 11889-11896
Author(s):  
Xianxi Yu ◽  
Tangyao Shen ◽  
Chunqin Zhu ◽  
Qi Zeng ◽  
Anran Yu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Unipolar Resistive Switching

Light assisted multilevel resistive switching memory devices based on all-inorganic perovskite quantum dots

2019 ◽  
Vol 114 (18) ◽  
pp. 181103 ◽  
Author(s):  
Zhiliang Chen ◽  
Yating Zhang ◽  
Yu Yu ◽  
Mingxuan Cao ◽  
Yongli Che ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Resistive Switching Memory ◽  
Perovskite Quantum Dots ◽  
Switching Memory

scholarly journals Tin-selenide as a futuristic material: properties and applications

RSC Advances ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 6477-6503 ◽  
Author(s):  
Manoj Kumar ◽  
Sanju Rani ◽  
Yogesh Singh ◽  
Kuldeep Singh Gour ◽  
Vidya Nand Singh
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Resistive Switching ◽  
Gas Sensors ◽  
Material Properties ◽  
Topological Insulators ◽  
Memory Devices ◽  
Tin Selenide ◽  
Switching Devices

SnSe/SnSe2 has diverse applications like solar cells, photodetectors, memory devices, Li and Na-ion batteries, gas sensors, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap.

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices

2016 ◽  
Vol 72 (2) ◽  
pp. 25-33 ◽  
Author(s):  
Y.-C. Chen ◽  
Y.-F. Chang ◽  
X. Wu ◽  
M. Guo ◽  
B. Fowler ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory
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