scholarly journals Task-Specific Tailored Cationic Polymeric Network with High Base-Resistance for Unprecedented 99TcO4– Cleanup from Alkaline Nuclear Waste

2021 ◽  
Author(s):  
Jie Li ◽  
Baoyu Li ◽  
Nannan Shen ◽  
Lixi Chen ◽  
Qi Guo ◽  
...  
Keyword(s):  
Nuclear Waste ◽  
Base Resistance ◽  
Polymeric Network ◽  
High Base

Current Gain Simulation of Npn AlGaN/GaN Heterojunction Bipolar Transistors

2000 ◽  
Vol 622 ◽  
Author(s):  
C. Monier ◽  
S. J. Pearton ◽  
A. G. Baca ◽  
P. C. Chang ◽  
L. Zhang ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Drift Diffusion Model ◽  
Base Resistance ◽  
Deep Acceptor ◽  
Transport Enhancement ◽  
Deep Acceptor Level ◽  
High Base ◽  
Dc Current

ABSTRACTA drift-diffusion model has been used to explore the performance capabilities of Npn AlGaN/GaN heterojunction bipolar transistors. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain β is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base.

Effect of Base Impurity Concentration on DC Characteristics of Double Ion Implanted 4H-SiC BJTs

2008 ◽  
Vol 1069 ◽  
Author(s):  
Taku Tajima ◽  
Satoshi Uchiumi ◽  
Kenta Tsukamoto ◽  
Kazumasa Takenaka ◽  
Masataka Satoh ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Impurity Concentration ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Injection Level ◽  
Collector Current ◽  
Base Resistance ◽  
Dc Characteristics ◽  
High Base ◽  
Ion Implanted

ABSTRACTDouble ion implanted 4H-SiC bipolar junction transistors (BJTs) are fabricated by Al and N ion implantation to the base and emitter. The current gain of 3 is obtained at the base Al concentration of 1 × ∼ 1017 /cm3. The collector current as a function of the base Gummel number suggests that double ion implanted 4H-SiC BJT operates in the intrinsic region below the emitter in the low injection level. The high base resistance restricts the base current at VBE as low as 3 V.

Infrared Spectroscopy Structural Analysis of Corroded Nuclear Waste Glass K-26

2008 ◽  
Author(s):  
Sergey Stefanovsky ◽  
Alexander Barinov ◽  
Galina Varlakova ◽  
Irene Startseva ◽  
Michael I. Ojovan
Keyword(s):  
Infrared Spectroscopy ◽  
Structural Analysis ◽  
Nuclear Waste ◽  
Waste Glass ◽  
Nuclear Waste Glass

Management of Nuclear Waste and Spent Fuel

1982 ◽  
Author(s):  
E. DRAPER ◽  
GEORGE COULBOURN
Keyword(s):  
Nuclear Waste ◽  
Spent Fuel

Ageing of Concrete Containers for the Disposal of Nuclear Waste

2002 ◽  
Vol 86 (6) ◽  
pp. 92-99
Author(s):  
Juraj Bilcik ◽  
Vladimir Benko ◽  
Ludovít Fillo
Keyword(s):  
Nuclear Waste
Sign in / Sign up

Export Citation Format

Share Document