scholarly journals Controlling Thin-Film Stress and Wrinkling during Perovskite Film Formation

2018 ◽  
Vol 3 (6) ◽  
pp. 1225-1232 ◽  
Author(s):  
Kevin A. Bush ◽  
Nicholas Rolston ◽  
Aryeh Gold-Parker ◽  
Salman Manzoor ◽  
Jakob Hausele ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Formation ◽  
Film Stress ◽  
Thin Film Stress

Growth of patterned island arrays to identify origins of thin film stress

2014 ◽  
Vol 115 (12) ◽  
pp. 123519 ◽  
Author(s):  
E. Chason ◽  
J. W. Shin ◽  
C.-H. Chen ◽  
A. M. Engwall ◽  
C. M. Miller ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Stress ◽  
Thin Film Stress

Effect of Film Thickness and Annealing Time on Residual Stress of High-k Al2O3 Film on Si-(100) Substrate

2013 ◽  
Vol 644 ◽  
pp. 161-164
Author(s):  
Wu Tang ◽  
Ji Jun Yang ◽  
Chi Ming Li
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Film Thickness ◽  
Annealing Time ◽  
Gate Dielectric ◽  
Electron Beam Evaporation ◽  
Film Stress ◽  
X Ray Diffraction ◽  
Thin Film Stress ◽  
High K

In this paper, Al2O3 thin film samples were deposited on Si-(100) substrate by electron beam evaporation with different thickness at substrate temperature 400°C and after that, annealed in the air at 500°C with different time. The structure, thickness and residual stress of these films were measured by X-ray diffraction (XRD), stylus profiler and electronic thin film stress distribution tester, respectively. The effects of several parameters on the properties of Al2O3 films were studied. In addition, the relations between thickness and residual stress of Al2O3 thin films as the high-k gate dielectric was analyzed. The results shown that the residual stress becomes smaller after annealing, the residual stress was depressed down to maximum value 300MPa from 580MPa for annealing time 30min, and depressed down to minimum value 220MPa from 580MPa for annealing time 60min. But eventually, it has a critical film thickness point on the scale.

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