Bidirectional doping of two-dimensional thin-layer transition metal dichalcogenides by soft ammonia plasma

Nanoscale ◽  
2021 ◽  
Author(s):  
Pu Tan ◽  
Kaixuan Ding ◽  
Xiumei Zhang ◽  
Zhenhua Ni ◽  
Kostya Ostrikov ◽  
...  
Keyword(s):  
Transition Metal ◽  
Thin Layer ◽  
Band Gap ◽  
Transition Metal Dichalcogenides ◽  
High Mobility ◽  
Two Dimensional ◽  
Layer Transition ◽  
Microelectronic Devices ◽  
Metal Dichalcogenides ◽  
P Type

Because of suitable band gap and high mobility, two-dimensional transition metal dichalcogenides (TMDs) materials are promising in future microelectronic devices. However, controllable p-type and n-type doping of TMDs is still...

n- and p-Type Doping Phenomenon by Artificial DNA and M-DNA on Two-Dimensional Transition Metal Dichalcogenides

ACS Nano ◽  
2014 ◽  
Vol 8 (11) ◽  
pp. 11603-11613 ◽  
Author(s):  
Hyung-Youl Park ◽  
Sreekantha Reddy Dugasani ◽  
Dong-Ho Kang ◽  
Jeaho Jeon ◽  
Sung Kyu Jang ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Artificial Dna ◽  
Metal Dichalcogenides ◽  
P Type

scholarly journals Role of Defects on Electronic Properties in Various Mono Layer Transition Metal Dichalcogenides

2021 ◽  
Author(s):  
Ravinder Pawar
Keyword(s):  
Transition Metal ◽  
Band Gap ◽  
Density Functional ◽  
Transition Metal Dichalcogenides ◽  
Impurity Band ◽  
Vital Role ◽  
Layer Transition ◽  
Vacancy Defects ◽  
Metal Dichalcogenides ◽  
Indirect Band Gap

The chalcogen vacancy defects in various transition metal dichalcogenides (TMDCs) have been studied using density functional theory (DFT) calculation. Results reveal that (i) the dissociation energy value depends on both nature of chalcogen and transition metal, (ii) the work function depends marginally on the single or double vacancies, (iii) the defect transforms direct band gap to indirect band gap materials (i.e. the pristine materials show KVKC transition whereas defective materials show ΓVKC) and (iii) the d-orbital of the transition metal plays a vital role in the formation of impurity band.

Strain engineering the properties of graphene and other two-dimensional crystals

2014 ◽  
Vol 16 (23) ◽  
pp. 11124-11138 ◽  
Author(s):  
Mark A. Bissett ◽  
Masaharu Tsuji ◽  
Hiroki Ago
Keyword(s):  
Transition Metal ◽  
Thin Layer ◽  
Transition Metal Dichalcogenides ◽  
Strain Engineering ◽  
Two Dimensional ◽  
Recent Advances ◽  
Metal Dichalcogenides

This perspective discusses recent advances in using strain to engineer the properties of thin-layer materials such as graphene and transition metal dichalcogenides (TMDs).

scholarly journals A first-principles study of the relationship between modulus and ideal strength of single-layer, transition metal dichalcogenides

2021 ◽  
Author(s):  
Hao Sun ◽  
Pratyaksh Agrawal ◽  
Chandra Veer Singh
Keyword(s):  
Transition Metal ◽  
Band Gap ◽  
First Principles ◽  
Transition Metal Dichalcogenides ◽  
Single Layer ◽  
Ideal Strength ◽  
Layer Transition ◽  
Metal Dichalcogenides ◽  
The Relationship ◽  
The Ideal

Deformation of single-layer transition metal dichalcogenides (TMDs) can tune their band gap. The regulating range of the band gap is determined by the ideal strengths, which is usually estimated, according...

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