Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction

ACS Nano ◽  
2021 ◽  
Vol 15 (3) ◽  
pp. 5689-5695
Author(s):  
Mengwei Si ◽  
Zhuocheng Zhang ◽  
Sou-Chi Chang ◽  
Nazila Haratipour ◽  
Dongqi Zheng ◽  
...  
Keyword(s):  
Semiconductor Junction

Theory and Experiments on Shot Noise in Semiconductor Junction Diodes and Transistors

1957 ◽  
Vol 45 (6) ◽  
pp. 839-854 ◽  
Author(s):  
W. Guggenbuehl ◽  
M. O. Strutt
Keyword(s):  
Shot Noise ◽  
Semiconductor Junction ◽  
Theory And Experiments

Comment on ’’A note on the assumption of quasiequilibrium in semiconductor junction devices’’

1979 ◽  
Vol 50 (6) ◽  
pp. 4477-4478 ◽  
Author(s):  
H. Guckel ◽  
D. C. Thomas ◽  
A. Demirkol
Keyword(s):  
Semiconductor Junction

Rectifying Behavior of Aligned ZnO Nanorods on Mg0.3Zn0.7O Thin Film Template

2011 ◽  
Vol 364 ◽  
pp. 35-39 ◽  
Author(s):  
Salina Muhamad ◽  
Abu Bakar Suriani ◽  
Mohamad Hafiz Mamat ◽  
Rafidah Ahmad ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Zno Nanorods ◽  
Thermionic Emission ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hexagonal Shape ◽  
Semiconductor Junction ◽  
Vertically Aligned ◽  
Scanning Electron

Rectifying behavior more than 3 orders of aligned zinc oxide (ZnO) nanorods grown on Mg0.3Zn0.7O thin film template using chemical bath deposition method was observed, giving a barrier height of 0.75 eV, and the ideality factor achieved was almost 6, which was analyzed using thermionic emission theory. Field emission scanning electron microscope (FESEM) images revealed that the grown ZnO was in hexagonal shape, uniformly distributed and in vertically aligned form. The crystallinity of the sample being studied using X-ray diffraction (XRD), where the highest peak was found at (002) phase, confirming that high crytallinity of ZnO was attained. The effect of metal/semiconductor junction between metal and aligned ZnO nanorods was discussed in further details.

An innovative Au-CdS/ZnS-RGO architecture for efficient photocatalytic hydrogen evolution

2018 ◽  
Vol 6 (7) ◽  
pp. 2895-2899 ◽  
Author(s):  
Shuangshuang Kai ◽  
Baojuan Xi ◽  
Xiaolei Liu ◽  
Lin Ju ◽  
Peng Wang ◽  
...  
Keyword(s):  
Hydrothermal Method ◽  
Hydrogen Evolution ◽  
Noble Metal ◽  
Au Nanoparticles ◽  
One Pot ◽  
Hole Transfer ◽  
Photocatalytic Hydrogen Evolution ◽  
Semiconductor Junction ◽  
Electron Transportation

An innovative CdS/ZnS-RGO hybrid is synthesizedviaan one-pot hydrothermal method. The further introduction of Au nanoparticles enables the composite with the merits of heterostructured semiconductor/semiconductor junction benefiting the hole transfer, as well as graphene and noble metal favorable for electron transportation.

Preparation and Characterization of a Superconductor-Semiconductor Junction: Ba1-xKxBiO3/Nb-Doped SrTiO3

1992 ◽  
pp. 919-922 ◽  
Author(s):  
Hiroshi Suzuki ◽  
Masahiro Iyori ◽  
Kazuhiro Shimaoka ◽  
Kouji Yamano ◽  
Tetsuya Yamamoto ◽  
...  
Keyword(s):  
Semiconductor Junction

Semiconductor junction devices

1974 ◽  
pp. 374-420
Author(s):  
R J Elliott ◽  
A F Gibson
Keyword(s):  
Semiconductor Junction

A non-quasi-static small-signal model for metal-semiconductor junction diodes

1990 ◽  
Vol 33 (12) ◽  
pp. 1629-1632
Author(s):  
J.J. Liou ◽  
K. Lee ◽  
S.M. Knapp ◽  
K.B. Sundaram ◽  
J.S. Yuan ◽  
...  
Keyword(s):  
Small Signal ◽  
Signal Model ◽  
Small Signal Model ◽  
Semiconductor Junction
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