Achieving Ultralow Friction and Wear by Tribocatalysis: Enabled by In-Operando Formation of Nanocarbon Films

Friction and wear are part and parcel of all walks of life, and for interfaces that are in close or near contact, tribology and mechanics are supremely important. They can critically influence the efficient functioning of devices and components. Nanoscale friction force follows a complex nonlinear dependence on multiple, often interdependent, interfacial and material properties. Various studies indicate that nanoscale devices may behave in ways that cannot be predicted from their larger counterparts. Nanoscale friction and wear mapping can help identify some ‘sweet spots’ that would give ultralow friction and near-zero wear. Mapping nanoscale friction and wear as a function of operating conditions and interface properties is a valuable tool and has the potential to impact the very way in which we design and select materials for nanotechnology applications.

Download Full-text

Ultralow-friction and wear properties of IF-WS2 under boundary lubrication

Tribology Letters ◽

10.1007/s11249-005-3607-8 ◽

2005 ◽

Vol 18 (4) ◽

pp. 477-485 ◽

Cited By ~ 176

Author(s):

L. Joly-Pottuz ◽

F. Dassenoy ◽

M. Belin ◽

B. Vacher ◽

J.M. Martin ◽

...

Keyword(s):

Boundary Lubrication ◽

Friction And Wear ◽

Wear Properties ◽

Ultralow Friction ◽

Friction And Wear Properties

Download Full-text

Analytical Electron Microscopy of Ion-Implanted Metals

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010011831x ◽

1985 ◽

Vol 43 ◽

pp. 282-285

Author(s):

D.I. Potter ◽

M. Ahmed ◽

K. Ruffing

Keyword(s):

Electron Microscopy ◽

Ion Implantation ◽

Friction And Wear ◽

Analytical Electron Microscopy ◽

Chemical Compositions ◽

Surface Chemical ◽

Near Surface ◽

The Past ◽

Analytical Electron ◽

Property Changes

Ion implantation, used extensively for the past decade in fabricating semiconductor devices, now provides a unique means for altering the near-surface chemical compositions and microstructures of metals. These alterations often significantly improve physical properties that depend on the surface of the material; for example, catalysis, corrosion, oxidation, hardness, friction and wear. Frequently the mechanisms causing these beneficial alterations and property changes remain obscure and much of the current research in the area of ion implantation metallurgy is aimed at identifying such mechanisms. Investigators thus confront two immediate questions: To what extent is the chemical composition changed by implantation? What is the resulting microstructure? These two questions can be investigated very fruitfully with analytical electron microscopy (AEM), as described below.

Download Full-text

Proposals for the ISS: «Penta-Tribos» Experiment - Study of the adequacy of the friction and wear data obtained for antifriction and wear-resistant materials directly in space at orbital stations and in laboratory conditions

Kosmìčna nauka ì tehnologìâ ◽

10.15407/knit2000.04.044 ◽

2000 ◽

Vol 6 (4) ◽

pp. 44-44 ◽

Cited By ~ 1

Author(s):

G.D. Gamulya ◽

O.L. Ostrovska ◽

T.P. Yukhno

Keyword(s):

Friction And Wear ◽

Experiment Study ◽

Wear Resistant ◽

Laboratory Conditions

Download Full-text

Stochastic Computing via In Operando Modulation of Rectification in Molecular Tunneling Junctions

10.26434/chemrxiv.12839714.v1 ◽

2020 ◽

Author(s):

Xinkai Qiu ◽

Sylvia Rousseva ◽

Gang Ye ◽

Jan C. Hummelen ◽

Ryan Chiechi

Keyword(s):

Self Assembly ◽

Variable Temperature ◽

Self Assembled Monolayers ◽

Microfluidic Channels ◽

Proof Of Concept ◽

Glycol Ethers ◽

Stochastic Computing ◽

Assembled Monolayers ◽

In Operando ◽

Tunneling Junctions

This paper describes the reconfiguration of molecular tunneling junctions during operation via the self-assembly of bilayers of glycol ethers. We use well-established functional groups to modulate the magnitude and direction of rectification in assembled tunneling junctions by exposing them to solutions containing different glycol ethers. Variable-temperature measurements establish that rectification occurs by a bias-dependent tunneling-hopping mechanism and that glycol ethers, beside being an unusually efficient tunneling medium, behave identically to alkanes. We fabricated memory bits from crossbar junctions prepared by injecting eutectic Ga-In into microfluidic channels. Two 8-bit registers were able to perform logical AND operations on bit strings encoded into chemical packets as microfluidic droplets that alter the composition of the crossbar junctions through self-assembly to effect memristor-like properties. This proof of concept work demonstrates the potential for fieldable molecular-electronic devices based on tunneling junctions of self-assembled monolayers and bilayers.

Download Full-text