Program circuit for a phase change memory array with 2 MB/s write throughput for embedded applications

2008 ◽  
Author(s):  
G. De Sandre ◽  
L. Bettini ◽  
E. Calvetti ◽  
G. Giacomi ◽  
M. Pasotti ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Array ◽  
Embedded Applications ◽  
Change Memory

Design of Side Bottom-Electrode-Contact for High Density Phase-Change Memory Array

2012 ◽  
Vol 12 (10) ◽  
pp. 7939-7943
Author(s):  
Yan Liu ◽  
Zhitang Song ◽  
Bo Liu ◽  
Jia Xu ◽  
Houpeng Chen ◽  
...  
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
High Density ◽  
Memory Array ◽  
Electrode Contact ◽  
Change Memory

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

2015 ◽  
Vol 111 ◽  
pp. 27-31 ◽  
Author(s):  
Paola Zuliani ◽  
Elisabetta Palumbo ◽  
Massimo Borghi ◽  
Giovanna Dalla Libera ◽  
Roberto Annunziata
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Chalcogenide Materials ◽  
Embedded Applications ◽  
Change Memory

Flexible One Diode-One Phase Change Memory Array Enabled by Block Copolymer Self-Assembly

ACS Nano ◽  
2015 ◽  
Vol 9 (4) ◽  
pp. 4120-4128 ◽  
Author(s):  
Beom Ho Mun ◽  
Byoung Kuk You ◽  
Se Ryeun Yang ◽  
Hyeon Gyun Yoo ◽  
Jong Min Kim ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Phase Change ◽  
Self Assembly ◽  
Phase Change Memory ◽  
Memory Array ◽  
Change Memory

Enhancing the Performance of Phase Change Memory for Embedded Applications

2019 ◽  
Vol 13 (4) ◽  
pp. 1800558 ◽  
Author(s):  
Xi Li ◽  
Houpeng Chen ◽  
Chenchen Xie ◽  
Daolin Cai ◽  
Sannian Song ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Embedded Applications ◽  
Change Memory

Energy Band States of an Oxygen-doped GeSbTe Phase-change Memory Cell; Mechanism of Low-voltage Operation

2007 ◽  
Vol 997 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Nozomu Matsuzaki ◽  
Kenzo Kurotsuchi ◽  
T Morikawa ◽  
M Kinoshita ◽  
...  
Keyword(s):  
Phase Change ◽  
Low Voltage ◽  
Cell Structure ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Low Voltage Operation ◽  
Improved Stability ◽  
A Cell ◽  
Embedded Applications ◽  
Change Memory

AbstractPhase-change memory is promising because it has a simple structure and has scalability that originates from its unique operating mechanism. However, the programming current should be reduced in accordance with the scaling of cell size [1,2]. We previously reported PCM (Phase Change Memory) cells that operate under 1.5-V/100-μA writing pulses [3, 4]. This PCM had a cell structure composed of 180-nm-W (tungsten) bottom contact to an O-GST (Oxygen-doped GeSbTe) film. Its low-power characteristic is suitable for 0.13-μm generation embedded applications. In the present study, we introduced a new W/O-GST/TaO/W cell structure and found further decrease of programming current the improved stability in the fabrication process. We analyzed the mechanism by which oxygen in GST and the additional TaO layer reduce the power consumption during SET/RESET operations.

Flexible Crossbar‐Structured Phase Change Memory Array via Mo‐Based Interfacial Physical Lift‐Off

2018 ◽  
Vol 29 (6) ◽  
pp. 1806338 ◽  
Author(s):  
Do Hyun Kim ◽  
Han Eol Lee ◽  
Byoung Kuk You ◽  
Sung Beom Cho ◽  
Rohan Mishra ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Array ◽  
Lift Off ◽  
Change Memory
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