Effect of Electron–Hole Overlap and Exchange Interaction on Exciton Radiative Lifetimes of CdTe/CdSe Heteronanocrystals

ACS Nano ◽  
2016 ◽  
Vol 10 (4) ◽  
pp. 4102-4110 ◽  
Author(s):  
Andrés Granados del Águila ◽  
Esther Groeneveld ◽  
Jan C. Maan ◽  
Celso de Mello Donegá ◽  
Peter C. M. Christianen
Author(s):  
Y. Chen ◽  
B. Gil ◽  
P. Lefebvre ◽  
H. Mathieu ◽  
T. Fukunaga ◽  
...  

2019 ◽  
Vol 53 (9) ◽  
pp. 1170-1174 ◽  
Author(s):  
A. V. Trifonov ◽  
I. V. Ignatiev ◽  
K. V. Kavokin ◽  
A. V. Kavokin ◽  
P. Yu. Shapochkin ◽  
...  

2003 ◽  
Vol 764 ◽  
Author(s):  
Suk Ing Liem ◽  
Roger J. Reeves

AbstractReactive Ion Etching (RIE) induces defects in semiconductor materials. These defects can serve as local non-radiative recombination centres for electron-hole pairs, affecting the radiative lifetimes and luminescence efficiencies of the semiconductors. Argon (Ar) and sulphur hexafluoride (SF6) gases were used as etching gases to investigate the influence of ion energy on the RIE induced optical damage of Gallium Nitride (GaN). The significant result of etching by Ar and SF6 gases was that these etching induce defects, but as the total PL does not greatly change, it appears that this process is not increasing the density of nonradiative centres.


Nano Research ◽  
2015 ◽  
Vol 9 (2) ◽  
pp. 549-559 ◽  
Author(s):  
Bo Peng ◽  
Xin Lu ◽  
Shi Chen ◽  
Cheng Hon Alfred Huan ◽  
Qihua Xiong ◽  
...  

2000 ◽  
Vol 76 (3) ◽  
pp. 351-353 ◽  
Author(s):  
M. L. Brongersma ◽  
P. G. Kik ◽  
A. Polman ◽  
K. S. Min ◽  
Harry A. Atwater

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