Influence of Ion Energy on the Reactive Ion Etching Induced Optical Damage of Gallium Nitride

2003 ◽  
Vol 764 ◽  
Author(s):  
Suk Ing Liem ◽  
Roger J. Reeves
Keyword(s):  
Gallium Nitride ◽  
Radiative Recombination ◽  
Reactive Ion Etching ◽  
Semiconductor Materials ◽  
Sulphur Hexafluoride ◽  
Electron Hole ◽  
Ion Etching ◽  
Radiative Lifetimes ◽  
Ion Energy ◽  
Optical Damage

AbstractReactive Ion Etching (RIE) induces defects in semiconductor materials. These defects can serve as local non-radiative recombination centres for electron-hole pairs, affecting the radiative lifetimes and luminescence efficiencies of the semiconductors. Argon (Ar) and sulphur hexafluoride (SF6) gases were used as etching gases to investigate the influence of ion energy on the RIE induced optical damage of Gallium Nitride (GaN). The significant result of etching by Ar and SF6 gases was that these etching induce defects, but as the total PL does not greatly change, it appears that this process is not increasing the density of nonradiative centres.

Gallium Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching

2002 ◽  
Vol 41 (Part 2, No. 8B) ◽  
pp. L910-L912 ◽  
Author(s):  
Chang-Chin Yu ◽  
Chen-Fu Chu ◽  
Juen-Yen Tsai ◽  
Hung Wen Huang ◽  
Tao-Hung Hsueh ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inductively Coupled

Chloromethane-based reactive ion etching of III–V semiconductor materials

Vacuum ◽  
1993 ◽  
Vol 44 (3-4) ◽  
pp. 233-237 ◽  
Author(s):  
VJ Law ◽  
GAC Jones ◽  
DA Ritchie ◽  
M Tewordt
Keyword(s):  
Reactive Ion Etching ◽  
Semiconductor Materials ◽  
Ion Etching

Batch reactive ion etching of gallium nitride using photoresist as a mask

2004 ◽  
Vol 1 (10) ◽  
pp. 2573-2576 ◽  
Author(s):  
Mark Dineen ◽  
Sean Lee ◽  
Ligang Deng ◽  
Andrew L. Goodyear ◽  
Colin Welch
Keyword(s):  
Gallium Nitride ◽  
Reactive Ion Etching ◽  
Ion Etching

Reactive Ion Etching of Boron Nitride and Gallium Nitride Materials in C12/Ar and BCl3/Cl2/Ar Chemistries

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Medelci ◽  
A. Tempez ◽  
E. Kim ◽  
N. Badi ◽  
D. Starikov ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
High Temperature ◽  
Boron Nitride ◽  
Electron Cyclotron Resonance ◽  
Surface Composition ◽  
Ion Beam ◽  
Reactive Ion Etching ◽  
Rf Power ◽  
Ion Etching ◽  
Etch Rates

ABSTRACTBoron nitride (BN) and gallium nitride (GaN) are known as superior semiconductor materials for high power and high temperature applications. Undoped BN layers grown using ion beam and electron cyclotron resonance (ECR) assisted physical deposition on conductive GaN films have demonstrated good insulating properties. These films are thus good candidates as thin insulating layers in high temperature GaN-based device structures such as MIS diodes and MISFETs due to their close thermal expansion coefficient. In order to address the device processing issue, reactive ion etching (RIE) tests were performed on these films. Using Cl2/Ar chemistry, etch rates up to 600 Å/min were measured. These rates were found to increase linearly with increasing rf power and Cl2 flow rate. GaN layers grown by gas source MBE were also dry etched, resulting in smooth sidewalls. Etch rates up to 1,400 Å/min were achieved at 200 W rf power (-280 V d.c. bias) in a BCl3/Cl2/Ar chemistry; this is the highest RIE rate reported up to now for GaN. Using Cl2/Ar and BCl3/Cl2/Ar for BN and GaN respectively, etch selectivities in excess of 5:1 can be obtained. Finally, preliminary Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) results on residue deposition and surface composition changes as a function of the different etch conditions are presented.

The Reactive Ion Etching of Gallium Nitride by Methylchloride/Hydrogen

1999 ◽  
Vol 176 (1) ◽  
pp. 739-742
Author(s):  
M. Dineen ◽  
H. Thomas ◽  
B. Humphreys ◽  
S. G. McMeekin
Keyword(s):  
Gallium Nitride ◽  
Reactive Ion Etching ◽  
Ion Etching

scholarly journals Highly Chemical Reactive Ion Etching of Gallium Nitride

2000 ◽  
Vol 5 (S1) ◽  
pp. 894-900
Author(s):  
F. Karouta ◽  
B. Jacobs ◽  
I. Moerman ◽  
K. Jacobs ◽  
J.L. Weyher ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Gallium Nitride ◽  
Chemical Property ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Mechanical Polishing ◽  
Partial Recovery ◽  
High Quality ◽  
Ion Etching ◽  
Polar Materials

A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containing gas in a chlorine based chemistry. In the perspective of using GaN substrates for homo-epitaxy of high quality GaN/AlGaN structures we have used the above described RIE process to smoothen Ga-polar GaN substrates. The RMS value, measured by AFM, went from 20 Å (after mechanical polishing) down to 4 Å after 6 minutes of RIE. Etching N-polar GaN resulted in a higher etch rate than Ga-polar materials (165 vs. 110 nm/min) but the resulting surface was quite rough and suffers from instability problems. Heat treatment and HCl dip showed a partial recovery of Schottky characteristics after RIE.

scholarly journals Highly Chemical Reactive Ion Etching of Gallium Nitride

1999 ◽  
Vol 595 ◽  
Author(s):  
F. Karouta ◽  
B. Jacobs ◽  
I. Moerman ◽  
K. Jacobs ◽  
J.L. Weyher ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Gallium Nitride ◽  
Chemical Property ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Mechanical Polishing ◽  
Partial Recovery ◽  
High Quality ◽  
Ion Etching ◽  
Polar Materials

Abstract: A highly chemical reactive ion etching process has been developed for MOVPE-grown GaN on sapphire. The key element for the enhancement of the chemical property during etching is the use of a fluorine containing gas in a chlorine based chemistry. In the perspective of using GaN substrates for homo-epitaxy of high quality GaN/AlGaN structures we have used the above described RIE process to smoothen Ga-polar GaN substrates. The RMS value, measured by AFM, went from 20 Å (after mechanical polishing) down to 4 Å after 6 minutes of RIE. Etching N-polar GaN resulted in a higher etch rate than Ga-polar materials (165 vs. 110 nm/min) but the resulting surface was quite rough and suffers from instability problems. Heat treatment and HCl dip showed a partial recovery of Schottky characteristics after RIE.

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