Universal In Situ Substitutional Doping of Transition Metal Dichalcogenides by Liquid-Phase Precursor-Assisted Synthesis

ACS Nano ◽  
2020 ◽  
Vol 14 (4) ◽  
pp. 4326-4335 ◽  
Author(s):  
Tianyi Zhang ◽  
Kazunori Fujisawa ◽  
Fu Zhang ◽  
Mingzu Liu ◽  
Michael C. Lucking ◽  
...  
ACS Nano ◽  
2020 ◽  
Vol 14 (12) ◽  
pp. 17114-17124
Author(s):  
Junghyun Lee ◽  
Jungwoo Heo ◽  
Hyeong Yong Lim ◽  
Jihyung Seo ◽  
Youngwoo Kim ◽  
...  

2021 ◽  
pp. 2100260
Author(s):  
Xi Wan ◽  
Xin Miao ◽  
Jie Yao ◽  
Shuai Wang ◽  
Feng Shao ◽  
...  

Author(s):  
Yan Liu ◽  
Qiang Zhou ◽  
Yalan Yan ◽  
Liang Li ◽  
Jian Zhu ◽  
...  

Pressure has been considered as an effective technique to modulate the structural, electronic, and optical properties of transition metal dichalcogenides (TMDs) materials. Here, by performing in situ high pressure Raman,...


2018 ◽  
Vol 10 (47) ◽  
pp. 40773-40780 ◽  
Author(s):  
Anjli Kumar ◽  
Amritanand Sebastian ◽  
Saptarshi Das ◽  
Emilie Ringe

Nano Letters ◽  
2016 ◽  
Vol 16 (12) ◽  
pp. 7588-7596 ◽  
Author(s):  
Wei Chen ◽  
Yayuan Liu ◽  
Yuzhang Li ◽  
Jie Sun ◽  
Yongcai Qiu ◽  
...  

Nanophotonics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1675-1694 ◽  
Author(s):  
Yumei Jing ◽  
Baoze Liu ◽  
Xukun Zhu ◽  
Fangping Ouyang ◽  
Jian Sun ◽  
...  

AbstractDiffering from its bulk counterparts, atomically thin two-dimensional transition metal dichalcogenides that show strong interaction with light are considered as new candidates for optoelectronic devices. Either physical or chemical strategies can be utilized to effectively tune the intrinsic electronic structures for adopting optoelectronic applications. This review will focus on the different tuning strategies that include its physics principles, in situ experimental techniques, and its application of various optoelectronic devices.


2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Xiahan Sang ◽  
Xufan Li ◽  
Wen Zhao ◽  
Jichen Dong ◽  
Christopher M. Rouleau ◽  
...  

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