Probing Transient Localized Electromagnetic Fields Using Low-Energy Point-Projection Electron Microscopy

ACS Photonics ◽  
2021 ◽  
Author(s):  
Germann Hergert ◽  
Andreas Wöste ◽  
Jan Vogelsang ◽  
Thomas Quenzel ◽  
Dong Wang ◽  
...  
1992 ◽  
Vol 295 ◽  
Author(s):  
H. J. Kreuzer

AbstractThe theory of the point source low energy electron microscope is reviewed. Images are calculated for a carbon fibre, a small cluster of MgO and a double helix of carbon atoms. A Kirchoff-Helmholtz transform is used for reconstruction. The importance of image size is stressed and the chemical specificity of the method is demonstrated


1997 ◽  
Vol 04 (03) ◽  
pp. 577-587 ◽  
Author(s):  
J. C. H. SPENCE ◽  
X. ZHANG ◽  
U. WEIERSTALL ◽  
J. M. ZUO ◽  
E. MUNRO ◽  
...  

1992 ◽  
Vol 7 (8) ◽  
pp. 1973-1975 ◽  
Author(s):  
J.W. Hoehn ◽  
T. Foecke ◽  
W.W. Gerberich

Cracks of up to 40 μm which are either transgranular cleavage or very low energy “ductile” cracks have been introduced into large-grained fcc Ni. The mechanism for introducing this brittle fracture was dynamic indentation. Optical and scanning electron microscopy together with use of selected area channeling patterns were used to confirm that the fracture process is transgranular. The results qualitatively support the hypothesis that dynamic cracks originating in a brittle film can propagate relatively large distances into a ductile face-centered-cubic substrate by a rapid, low energy process.


2000 ◽  
Vol 639 ◽  
Author(s):  
Philomela Komninou ◽  
Joseph Kioseoglou ◽  
Eirini Sarigiannidou ◽  
George P. Dimitrakopulos ◽  
Thomas Kehagias ◽  
...  

ABSTRACTThe interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.


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