Hybrid Silicon Microlasers with Gain Patches of Unlimited Designs

ACS Photonics ◽  
2021 ◽  
Vol 8 (9) ◽  
pp. 2590-2597
Author(s):  
Yushin Kim ◽  
Byoung Jun Park ◽  
Moohyuk Kim ◽  
Da In Song ◽  
Jungmin Lee ◽  
...  
Keyword(s):  
Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2605
Author(s):  
Ashley Novais ◽  
Carlos Calaza ◽  
José Fernandes ◽  
Helder Fonseca ◽  
Patricia Monteiro ◽  
...  

Multisite neural probes are a fundamental tool to study brain function. Hybrid silicon/polymer neural probes combine rigid silicon and flexible polymer parts into one single device and allow, for example, the precise integration of complex probe geometries, such as multishank designs, with flexible biocompatible cabling. Despite these advantages and benefiting from highly reproducible fabrication methods on both silicon and polymer substrates, they have not been widely available. This paper presents the development, fabrication, characterization, and in vivo electrophysiological assessment of a hybrid multisite multishank silicon probe with a monolithically integrated polyimide flexible interconnect cable. The fabrication process was optimized at wafer level, and several neural probes with 64 gold electrode sites equally distributed along 8 shanks with an integrated 8 µm thick highly flexible polyimide interconnect cable were produced. The monolithic integration of the polyimide cable in the same fabrication process removed the necessity of the postfabrication bonding of the cable to the probe. This is the highest electrode site density and thinnest flexible cable ever reported for a hybrid silicon/polymer probe. Additionally, to avoid the time-consuming bonding of the probe to definitive packaging, the flexible cable was designed to terminate in a connector pad that can mate with commercial zero-insertion force (ZIF) connectors for electronics interfacing. This allows great experimental flexibility because interchangeable packaging can be used according to experimental demands. High-density distributed in vivo electrophysiological recordings were obtained from the hybrid neural probes with low intrinsic noise and high signal-to-noise ratio (SNR).


Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1646
Author(s):  
Jingya Xie ◽  
Wangcheng Ye ◽  
Linjie Zhou ◽  
Xuguang Guo ◽  
Xiaofei Zang ◽  
...  

In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication and integration opportunities that it would enable. Although silicon photonics has enabled the implementation of a large number of optical components for practical use, for THz integrated systems, we still face several challenges associated with high-quality hybrid silicon lasers, conversion efficiency, device integration, and fabrication. This paper provides an overview of recent progress in THz technologies based on silicon photonics or hybrid silicon photonics, including THz generation, detection, phase modulation, intensity modulation, and passive components. As silicon-based electronic and photonic circuits are further approaching THz frequencies, one single chip with electronics, photonics, and THz functions seems inevitable, resulting in the ultimate dream of a THz electronic–photonic integrated circuit.


2010 ◽  
Vol 58 (11) ◽  
pp. 3213-3219 ◽  
Author(s):  
Hui-Wen Chen ◽  
Alexander W. Fang ◽  
Jonathan D. Peters ◽  
Zhi Wang ◽  
Jock Bovington ◽  
...  

Author(s):  
John E. Bowers ◽  
Di Liang ◽  
Marco Fiorentino ◽  
Raymond G. Beausoleil
Keyword(s):  

2008 ◽  
Vol 22 (12) ◽  
pp. 1183-1202 ◽  
Author(s):  
QILIANG LI

As CMOS technology extends beyond the current technology node, many challenges to conventional MOSFET were raised. Non-classical CMOS to extend and fundamentally new technologies to replace current CMOS technology are under intensive investigation to meet these challenges. The approach of hybrid silicon/molecular electronics is to provide a smooth transition technology by integrating molecular intrinsic scalability and diverse properties with the vast infrastructure of traditional MOS technology. Here we discuss: (1) the integration of redox-active molecules into Si -based structures, (2) characterization and modeling of the properties of these Si /molecular systems, (3) single and multiple states of Si /molecular memory, and (4) applications based on hybrid Si /molecular electronic system.


2014 ◽  
Vol 211 (11) ◽  
pp. 2657-2661 ◽  
Author(s):  
Flavio Santos Freitas ◽  
Rafael Borges Merlo ◽  
Francisco Chagas Marques ◽  
Ana Flavia Nogueira

2006 ◽  
Vol 83 (1) ◽  
pp. 20-23
Author(s):  
Almira Jean ◽  
Rusli ◽  
Zhongxiang Shen

Sign in / Sign up

Export Citation Format

Share Document