Optimizing the Mg Doping Concentration of Na3V2–xMgx(PO4)2F3/C for Enhanced Sodiation/Desodiation Properties

2021 ◽  
Author(s):  
Diah Agustina Puspitasari ◽  
Jagabandhu Patra ◽  
I-Ming Hung ◽  
Dominic Bresser ◽  
Tai-Chou Lee ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Mg Doping

Effects of Mg Doping Concentration on Resistive Switching Behavior and Properties of SrTi1−yMgyO3 Films

2019 ◽  
Vol 34 (4) ◽  
pp. 888-892
Author(s):  
Wenbo Zhang ◽  
Hua Wang ◽  
Jiwen Xu ◽  
Guobao Liu ◽  
Hang Xie ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Doping Concentration ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Mg Doping

STUDIES ON STRUCTURAL, SURFACE MORPHOLOGICAL, OPTICAL, LUMINESCENCE AND UV PHOTODETECTION PROPERTIES OF SOL–GEL Mg-DOPED ZnO THIN FILMS

2019 ◽  
Vol 26 (03) ◽  
pp. 1850167 ◽  
Author(s):  
A. MAHROUG ◽  
B. MARI ◽  
M. MOLLAR ◽  
I. BOUDJADAR ◽  
L. GUERBOUS ◽  
...  
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Sol Gel ◽  
Visible Region ◽  
Wurtzite Structure ◽  
Visible Range ◽  
Bandgap Energy ◽  
Mg Doping ◽  
Uv Emission ◽  
Morphological Studies

Undoped and magnesium-doped zinc oxide thin films were prepared by the sol–gel method. Results from X-ray diffraction indicated that the films exhibited a hexagonal wurtzite structure and were highly oriented along the [Formula: see text]-axis. The intensity of the (002) diffraction peak increased with increasing the Mg doping concentration. Also, Mg doping inhibited the growth of crystallite size which decreased from 46[Formula: see text]nm to 38[Formula: see text]nm with doping concentration. Morphological studies by atomic force microscopy (AFM) indicated the uniform thin film growth and the decreasing of grain size and surface roughness with Mg doping. Optical analysis showed that the average transmittance of all films was above 90% in the visible range and Mg doping has significantly enhanced the bandgap energy of ZnO. Two Raman modes assigned to [Formula: see text] and [Formula: see text] for the ZnO wurtzite structure were observed for all films. UV emission peak and three defect emission peaks in the visible region were observed by photoluminescence measurements at room temperature. The intensity ratio of UV emission to the visible emission increased with the Mg concentration. Photocurrent measurements revealed that all films presented the photoresponses with [Formula: see text]-type semiconducting behavior and their generated photocurrents were reduced by Mg doping. The prepared thin films of high quality with improved properties by Mg doping could be proposed to workers in the field of optoelectronic devices for using them as a strong candidate.

Decay Characteristic of Gallium Nitride Photocathode in a High Vacuum System

2014 ◽  
Vol 526 ◽  
pp. 59-63
Author(s):  
Xiao Qian Fu
Keyword(s):  
Gallium Nitride ◽  
Quantum Efficiency ◽  
Doping Concentration ◽  
High Vacuum ◽  
Dipole Model ◽  
Vacuum System ◽  
Band Bending ◽  
Mg Doping ◽  
Decay Characteristic ◽  
The Ideal

The decay characteristics of the originally-activated GaN photocathode are explored by testing the change of quantum efficiency (QE).The QE after degradation for 9 hours can still keep more than 42% of the original value, and after reactivated with cesium, the QEs are almost recovered. The restorations of both the band bending and the ideal Cs/O ratio on the surface, along with the double dipole model are proposed to explain the QE variation of the GaN photocathode. Further exploration should include the roles played by the achievement of the maximum band bending of the GaN surface when deposited with Cs and its relationship with the surface Mg doping concentration.

Effect of Mg doping concentration of electron blocking layer on the performance of GaN-based laser diodes

2019 ◽  
Vol 125 (12) ◽  
Author(s):  
J. Yang ◽  
D. G. Zhao ◽  
J. J. Zhu ◽  
Z. S. Liu ◽  
D. S. Jiang ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Laser Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Mg Doping

Effects of Mg-doping concentration on the characteristics of InGaN based solar cells

2015 ◽  
Vol 11 (5) ◽  
pp. 348-351 ◽  
Author(s):  
Gang Lu ◽  
Bo Wang ◽  
Yun-wang Ge
Keyword(s):  
Solar Cells ◽  
Doping Concentration ◽  
Mg Doping

scholarly journals Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1335
Author(s):  
Chibuzo Onwukaeme ◽  
Han-Youl Ryu
Keyword(s):  
Output Power ◽  
Laser Diode ◽  
Doping Concentration ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Blue Laser ◽  
Electron Blocking Layer ◽  
Mg Doping ◽  
Cladding Layer ◽  
P Type

In GaN-based laser diode (LD) structures, Mg doping in p-type-doped layers has a significant influence on the device performance. As the doping concentration increases, the operation voltage decreases, whereas the output power decreases as a result of increased optical absorption, implying that optimization of the Mg doping concentration is required. In this study, we systematically investigated the effect of the Mg doping concentration in the AlGaN electron-blocking layer (EBL) and the AlGaN p-cladding layer on the output power, forward voltage, and wall-plug efficiency (WPE) of InGaN blue LD structures using numerical simulations. In the optimization of the EBL, an Al composition of 20% and an Mg doping concentration of 3 × 1019 cm−3 exhibited the best performance, with negligible electron leakage and a high WPE. The optimum Mg concentration of the p-AlGaN cladding layer was found to be ~1.5 × 1019 cm−3, where the maximum WPE of 38.6% was obtained for a blue LD with a threshold current density of 1 kA/cm2 and a slope efficiency of 2.1 W/A.

Sign in / Sign up

Export Citation Format

Share Document