scholarly journals Mg-Doping-Concentration Dependence for Ni/p-GaN Schottky Contacts

2020 ◽  
Vol 69 (10) ◽  
pp. 717-720
Author(s):  
Kenji SHIOJIMA
Keyword(s):  
Concentration Dependence ◽  
Doping Concentration ◽  
Schottky Contacts ◽  
Mg Doping

Optimizing the Mg Doping Concentration of Na3V2–xMgx(PO4)2F3/C for Enhanced Sodiation/Desodiation Properties

2021 ◽  
Author(s):  
Diah Agustina Puspitasari ◽  
Jagabandhu Patra ◽  
I-Ming Hung ◽  
Dominic Bresser ◽  
Tai-Chou Lee ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Mg Doping

Effect of Near-Interface Concentration Change on Barrier Height in Ion-Bombarded and Heat-Treated GaAs Schottky Contacts

1992 ◽  
Vol 260 ◽  
Author(s):  
ZS. J. Horváth
Keyword(s):  
Barrier Height ◽  
Side Effect ◽  
Doping Concentration ◽  
Schottky Barrier Height ◽  
Schottky Contacts ◽  
Concentration Change ◽  
Semiconductor Interface ◽  
Interface Concentration ◽  
Heat Treated ◽  
Definition Of

ABSTRACTThe change of the doping concentration (including type) near the metal-semiconductor interface influences the Schottky barrier height (BH). In many cases this phenomenon is apparently spontaneous, or it is a side effect of the technology. The goal of this paper is to summarize the effect of the near-interface concentration change on the apparent and real Schottky BHs, and to demonstrate its importance with experimental results obtained in GaAs Schottky contacts. The question of the definition of the real BH for some of these structures is also treated.

scholarly journals On the doping concentration dependence and dopant selectivity of photogenerated carrier assisted etching of 4H–SiC epilayers

2019 ◽  
Vol 323 ◽  
pp. 134778
Author(s):  
Shojan P. Pavunny ◽  
Rachael L. Myers-Ward ◽  
Kevin M. Daniels ◽  
Wendy Shi ◽  
Karthik Sridhara ◽  
...  
Keyword(s):  
Concentration Dependence ◽  
Doping Concentration ◽  
Photogenerated Carrier

Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD

2014 ◽  
Vol 64 (3) ◽  
pp. 443-450
Author(s):  
Yeon-Ho Kil ◽  
Hyeon Deok Yang ◽  
Jong-Han Yang ◽  
Sukill Kang ◽  
Tae Soo Jeong ◽  
...  
Keyword(s):  
Concentration Dependence ◽  
Doping Concentration ◽  
Boron Doped ◽  
P Type

scholarly journals Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires

2016 ◽  
Vol 108 (18) ◽  
pp. 182106 ◽  
Author(s):  
Shermin Arab ◽  
Maoqing Yao ◽  
Chongwu Zhou ◽  
P. Daniel Dapkus ◽  
Stephen B. Cronin
Keyword(s):  
Concentration Dependence ◽  
Doping Concentration ◽  
Photoluminescence Spectra ◽  
Gaas Nanowires

Pressure Dependence of Aluminum Doping in SiC Vapor Phase Epitaxy

2004 ◽  
Vol 815 ◽  
Author(s):  
Adolf Schöner ◽  
Malin Gustafsson
Keyword(s):  
Vapor Phase ◽  
Doping Concentration ◽  
Profile Analysis ◽  
Schottky Contacts ◽  
Doping Profile ◽  
Aluminum Concentration ◽  
Analysis Method ◽  
Homoepitaxial Growth ◽  
Capacitance Voltage ◽  
Reactor Pressure

AbstractThe dependence of the aluminum incorporation on the total pressure in a hot wall vapor phase reactor for SiC homoepitaxial growth has been investigated. It was found that in the doping concentration range from 1·1017 cm−3 to 1·1019 cm−3 the incorporated aluminum concentration varies by the factor 3 to 4, when the reactor pressure is changed from 150 mbar to 250 mbar. Lower reactor pressure gives lower aluminum concentration. Periodically changing reactor pressure results in aluminum concentration periodically changing with depth in the epilayer. All results were measured electrically by capacitance-voltage measurements on nickel Schottky contacts. Additional experiments have been performed for n-type nitrogen doped SiC epilayers for comparison. The nitrogen doping concentration was found to be independent of the reactor pressure within the accuracy of the applied C-V measurements and the doping profile analysis method.

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