scholarly journals Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1335
Author(s):  
Chibuzo Onwukaeme ◽  
Han-Youl Ryu
Keyword(s):  
Output Power ◽  
Laser Diode ◽  
Doping Concentration ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Blue Laser ◽  
Electron Blocking Layer ◽  
Mg Doping ◽  
Cladding Layer ◽  
P Type

In GaN-based laser diode (LD) structures, Mg doping in p-type-doped layers has a significant influence on the device performance. As the doping concentration increases, the operation voltage decreases, whereas the output power decreases as a result of increased optical absorption, implying that optimization of the Mg doping concentration is required. In this study, we systematically investigated the effect of the Mg doping concentration in the AlGaN electron-blocking layer (EBL) and the AlGaN p-cladding layer on the output power, forward voltage, and wall-plug efficiency (WPE) of InGaN blue LD structures using numerical simulations. In the optimization of the EBL, an Al composition of 20% and an Mg doping concentration of 3 × 1019 cm−3 exhibited the best performance, with negligible electron leakage and a high WPE. The optimum Mg concentration of the p-AlGaN cladding layer was found to be ~1.5 × 1019 cm−3, where the maximum WPE of 38.6% was obtained for a blue LD with a threshold current density of 1 kA/cm2 and a slope efficiency of 2.1 W/A.

Influence of the P type doping of the InP cladding layer on the threshold current density in 1.5μm Q.W. lasers

2005 ◽  
Author(s):  
B. Sermage ◽  
M. Blez ◽  
C. Kazmierski ◽  
A. Ougazzaden ◽  
A. Mircea ◽  
...  
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cladding Layer ◽  
P Type

scholarly journals Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 875
Author(s):  
Wenjie Wang ◽  
Wuze Xie ◽  
Zejia Deng ◽  
Mingle Liao
Keyword(s):  
Quantum Wells ◽  
Output Power ◽  
Laser Diode ◽  
Barrier Layer ◽  
Threshold Current ◽  
Reference Structure ◽  
Multiple Quantum ◽  
Symmetric Quantum ◽  
Low Threshold ◽  
P Type

Herein, the optical field distribution and electrical property improvements of the InGaN laser diode with an emission wavelength around 416 nm are theoretically investigated by adjusting the relative thickness of the first or last barrier layer in the three In0.15Ga0.85N/In0.02Ga0.98N quantum wells, which is achieved with the simulation program Crosslight. It was found that the thickness of the first or last InGaN barrier has strong effects on the threshold currents and output powers of the laser diodes. The optimal thickness of the first quantum barrier layer (FQB) and last quantum barrier layer (LQB) were found to be 225 nm and 300 nm, respectively. The thickness of LQB layer predominantly affects the output power compared to that of the FQB layer, and the highest output power achieved 3.87 times that of the reference structure (symmetric quantum well), which is attributed to reduced optical absorption loss as well as the reduced vertical electron leakage current leaking from the quantum wells to the p-type region. Our result proves that an appropriate LQB layer thickness is advantageous for achieving low threshold current and high output power lasers.

Influence of the p-type doping of the InP cladding layer on the threshold current density in 1.5 um QW lasers

1991 ◽  
Author(s):  
Bernard Sermage ◽  
M. Blez ◽  
Christophe Kazmierski ◽  
Abdallah Ougazzaden ◽  
Andrei Mircea ◽  
...  
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cladding Layer ◽  
P Type

Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer

2021 ◽  
Vol 19 (12) ◽  
pp. 121404
Author(s):  
Lingrong Jiang ◽  
Jianping Liu ◽  
Lei Hu ◽  
Liqun Zhang ◽  
Aiqin Tian ◽  
...  
Keyword(s):  
Laser Diode ◽  
Current Density ◽  
Threshold Current ◽  
Green Laser ◽  
Threshold Current Density ◽  
Cladding Layer

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

2021 ◽  
Vol 42 (11) ◽  
pp. 112801
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Ping Chen ◽  
Jing Yang ◽  
...  
Keyword(s):  
Laser Diode ◽  
Room Temperature ◽  
Continuous Wave ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Stimulated Emission ◽  
Blue Laser ◽  
Organic Chemical ◽  
Blue Laser Diode ◽  
Continuous Wave Operation

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.

QUANTUM WELL LASERS AND THEIR APPLICATIONS

1996 ◽  
Vol 07 (03) ◽  
pp. 373-381
Author(s):  
LIANGHUI CHEN
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Mainland China ◽  
Optical Fiber Communication ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Material System ◽  
High Modulation ◽  
Low Threshold

Quantum well lasers have attracted a great deal of attention by their many advantages such as low threshold current density, excellent temperature feature, high modulation rate and wavelength adjustability etc. The investigation on quantum well laser in mainland China started in the early 80s. AlGaAs/GaAs QW laser diode and InGaAs/GaAs strained layer QW laser diode have been developed using MBE technology with extremely low threshold current and high T0. Now the growth technologies for QW structure have been expanded to MOCVD technology. Emission wavelengths, on longer wavelength sides have been expanded up to 1.3 µm and 1.55 µm with InGaAsP/InP material system for application in optical fiber communication. On shorter wavelength sides, the emission wavelength has been expanded to lower than 670 nm, for applications in optical information processing. The characteristics of these devices will be demonstrated in this paper. The QW-DFB LD and low-dimension quantum wire and quantum dot lasers are under investigation.

scholarly journals Semipolar {202̅1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1563
Author(s):  
Srinivas Gandrothula ◽  
Haojun Zhang ◽  
Pavel Shapturenka ◽  
Ryan Anderson ◽  
Matthew S. Wong ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Output Power ◽  
Laser Diode ◽  
Laser Diodes ◽  
Light Output ◽  
Laser Action ◽  
Feasibility Studies ◽  
Threshold Current ◽  
Optical Measurements ◽  
Light Output Power

Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial lateral overgrown (ELO) wing of a semipolar {202̅1} GaN substrate, termed an ELO wing LD. Two types of facet feasibility studies were conducted: (1) “handmade” facets, wherein lifted-off ELO wing LDs were cleaved manually, and (2) facets formed on wafers through reactive ion etching (RIE). Pulsed operation electrical and optical measurements confirmed the laser action in the RIE facet LDs with a threshold current of ~19 kAcm−2 and maximum light output power of 20 mW from a single uncoated facet. Handmade facet devices showed spontaneous, LED-like emission, confirming device layers remain intact after mechanical liftoff.

PERFORMANCE ENHANCEMENT OF InGaN-BASED LASER DIODES USING A STEP-GRADED AlxGa1-xN ELECTRON BLOCKING LAYER

2011 ◽  
Vol 20 (03) ◽  
pp. 515-520
Author(s):  
Y. ZHANG ◽  
J.-P. LIU ◽  
T.-T. KAO ◽  
S. KIM ◽  
Y.-C. LEE ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Performance Enhancement ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Device Performance ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Electron Accumulation ◽  
Continuous Wave Operation

A step-graded Al x Ga 1- x N electron blocking layer (EBL) is introduced to the InGaN -based edge-emitting blue-violet laser diode (LD) structure to suppress the undesired built-in interface polarization charges. When compared to a conventional abrupt Al 0.18 Ga 0.82 N EBL design, the step-graded Al x Ga 1- x N EBL design may help reduce the electron accumulation at the edge of the active region and hence improve the quantum efficiency in LD operation. The effects of the step-graded Al x Ga 1- x N EBL on the fabricated device performance are also investigated. LDs with the step-graded Al x Ga 1- x N EBL demonstrated significantly reduced threshold current density and increased slope efficiency under the continuous-wave operation.

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