One Pot Green Synthesis of Si Quantum Dots and Catalytic Au Nanoparticle–Si Quantum Dot Nanocomposite

2019 ◽  
Vol 7 (3) ◽  
pp. 3309-3318 ◽  
Author(s):  
Bhagwati Sharma ◽  
Swati Tanwar ◽  
Tapasi Sen
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Green Synthesis ◽  
Au Nanoparticle ◽  
One Pot ◽  
Si Quantum Dot ◽  
Si Quantum Dots

Enhancement of efficiency and long-term stability in graphene/Si-quantum-dot heterojunction photodetectors by employing bis(trifluoromethanesulfonyl)-amide as a dopant for graphene

2017 ◽  
Vol 5 (48) ◽  
pp. 12737-12743 ◽  
Author(s):  
Dong Hee Shin ◽  
Chan Wook Jang ◽  
Ju Hwan Kim ◽  
Jong Min Kim ◽  
Ha Seung Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Term Stability ◽  
Long Term Stability ◽  
Si Quantum Dot ◽  
First Time ◽  
Si Quantum Dots

Bis(trifluoromethanesulfonyl)-amide (TFSA) is for the first time employed as a dopant for graphene for graphene/Si-quantum-dots-based photodetectors.

Size-controlled Si quantum dots embedded in B-doped SiNx/Si3N4 superlatice for Si quantum dot solar cells

2016 ◽  
Vol 28 (2) ◽  
pp. 1322-1327 ◽  
Author(s):  
Xiaobo Chen ◽  
Wen Yang ◽  
Peizhi Yang ◽  
Junbao Yuan ◽  
Fei Zhao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Si Quantum Dot ◽  
Quantum Dot Solar Cells ◽  
Size Controlled ◽  
Si Quantum Dots

scholarly journals One-pot synthesis of graphene quantum dots and simultaneous nanostructured self-assembly via a novel microwave-assisted method: impact on triazine removal and efficiency monitoring

RSC Advances ◽  
2018 ◽  
Vol 8 (52) ◽  
pp. 29939-29946 ◽  
Author(s):  
Beatriz Fresco-Cala ◽  
M. Laura Soriano ◽  
Alice Sciortino ◽  
Marco Cannas ◽  
Fabrizio Messina ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Self Assembly ◽  
Graphene Quantum Dots ◽  
One Pot ◽  
Graphene Quantum Dot ◽  
Microwave Assisted ◽  
Microwave Reaction ◽  
One Step ◽  
Microwave Assisted Method

Graphene quantum dot (GQDs) assemblies from a one-step microwave reaction as bifunctional materials in remediation of triazines.

Effects of Si Spacer-Layer on the Structure of Ge/Si Quantum Dots Bilayers Grown by Ion Beam Sputtering

2013 ◽  
Vol 873 ◽  
pp. 479-485
Author(s):  
Xi Zhou ◽  
Chong Wang ◽  
Jie Yang ◽  
Ying Xia Jin ◽  
Yu Yang
Keyword(s):  
Quantum Dots ◽  
Double Layer ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Si Quantum Dot ◽  
Spacer Layer ◽  
Beam Sputtering ◽  
Factor Interactions ◽  
Si Quantum Dots

A series of double-layer Ge/Si quantum dots are prepared by ion beam sputtering deposition (IBSD) on Si (100) substrates. The influences of deposition temperature and thickness of Si spacer-layer on the microstructure of double-layer Ge/Si quantum dots were characterized by using Atomic force microscopy (AFM) and Raman spectra technique. The results indicate that the density of the second layer islands firstly increases and then decreases with increasing the growth temperature of Si spacer-layers. In addition, increasing the thickness of Si spacer-layer, the islands merger phenomenon disappears. When the deposition thickness is larger than 40 nm, the islands on the upper-layer show the same features with the buried islands. The mechanism of three-factor-interactions of nanoislands is proposed to explain these phenomena, and our results can be used as a guidance to obtain optimum IBSD growth process for Ge/Si quantum-dot superlattices.

One-pot green synthesis of CdS quantum dots using Opuntia ficus-indica fruit sap

2020 ◽  
Vol 26 ◽  
pp. 3503-3506 ◽  
Author(s):  
K. Kandasamy ◽  
M. Venkatesh ◽  
Y.A. Syed Khadar ◽  
Paramasivan Rajasingh
Keyword(s):  
Quantum Dots ◽  
Green Synthesis ◽  
Cds Quantum Dots ◽  
One Pot ◽  
Opuntia Ficus Indica

scholarly journals Realization of the Kohn’s Theorem in Ge/Si Quantum Dots with Hole Gas: Theory and Experiment

Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 56 ◽  
Author(s):  
Hayk A. Sarkisyan ◽  
David B. Hayrapetyan ◽  
Lyudvig S. Petrosyan ◽  
Eduard M. Kazaryan ◽  
Anton N. Sofronov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Far Infrared ◽  
Resonant Absorption ◽  
Experimental Results ◽  
Quantum Transitions ◽  
Si Quantum Dots ◽  
Specific Quantum ◽  
Good Agreement

This article discusses specific quantum transitions in a few-particle hole gas, localized in a strongly oblate lens-shaped quantum dot. Based on the adiabatic method, the possibility of realizing the generalized Kohn theorem in such a system is shown. The criteria for the implementation of this theorem in a lens-shaped quantum dot, fulfilled in the experiment, is presented. An analytical expression is obtained for the frequencies of resonant absorption of far-infrared radiation by a gas of heavy holes, which depends on the geometric parameters of the quantum dot. The results of experiments on far-infrared absorption in the arrays of p-doped Ge/Si quantum dots grown by molecular beam epitaxy (MBE) with gradually increasing average number of holes in dot are presented. Experimental results show that the Coulomb interaction between the holes does not affect the resonant frequency of the transitions. A good agreement between the theoretical and experimental results is shown.

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