Outstanding H2 Sensing Performance of Pd Nanoparticle-Decorated ZnO Nanorod Arrays and the Temperature-Dependent Sensing Mechanisms

2012 ◽  
Vol 5 (1) ◽  
pp. 135-143 ◽  
Author(s):  
Chia-Ming Chang ◽  
Min-Hsiung Hon ◽  
Ing-Chi Leu
2015 ◽  
Vol 3 (43) ◽  
pp. 11397-11405 ◽  
Author(s):  
Xiaomei Wang ◽  
Fazhe Sun ◽  
Yongqing Duan ◽  
Zhouping Yin ◽  
Wei Luo ◽  
...  

The hierarchical ZnO-NAs sensor shows highly sensitive, repeatable on–off cycles and temperature dependent response to NO2. The optimal process parameters of the MES-CHSM are presented to achieve optimal morphology, enlarge gas response and measuring range.


RSC Advances ◽  
2016 ◽  
Vol 6 (3) ◽  
pp. 2500-2503 ◽  
Author(s):  
Sheng-Guang Ban ◽  
Xiao-Hua Liu ◽  
Tao Ling ◽  
Cun-Ku Dong ◽  
Jing Yang ◽  
...  

A double layer structure, CdO porous nanoflake arrays on ZnO nanorod arrays, was fabricated and achieved excellent gas-sensing performance upon exposure to diethyl ether.


Nanomaterials ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 900 ◽  
Author(s):  
Dongyi Ao ◽  
Zhijie Li ◽  
Yongqing Fu ◽  
Yongliang Tang ◽  
Shengnan Yan ◽  
...  

H2S gas sensors were fabricated using p-n heterojunctions of NiO/ZnO, in which the ZnO nanorod arrays were wrapped with NiO nanosheets via a hydrothermal synthesis method. When the H2S gas molecules were adsorbed and then oxidized on the ZnO surfaces, the free electrons were released. The increase in the electron concentration on the ZnO boosts the transport speed of the electrons on both sides of the NiO/ZnO p-n junction, which significantly improved the sensing performance and selectivity for H2S detection, if compared with sensors using the pure ZnO nanorod arrays. The response to 20 ppm of H2S was 21.3 at 160 °C for the heterostructured NiO/ZnO sensor, and the limit of detection was 0.1 ppm. We found that when the sensor was exposed to H2S at an operating temperature below 160 °C, the resistance of the sensor significantly decreased, indicating its n-type semiconductor nature, whereas when the operating temperature was above 160 °C, the resistance significantly increased, indicating its p-type semiconductor nature. The sensing mechanism of the NiO/ZnO heterostructured H2S gas sensor was discussed in detail.


2019 ◽  
Vol 463 ◽  
pp. 348-356 ◽  
Author(s):  
Dan Meng ◽  
Dongyu Liu ◽  
Guosheng Wang ◽  
Yanbai Shen ◽  
Xiaoguang San ◽  
...  

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