Azobenzene-Functionalized Gold Nanoparticles as Hybrid Double-Floating-Gate in Pentacene Thin-Film Transistors/Memories with Enhanced Response, Retention, and Memory Windows

2013 ◽  
Vol 5 (19) ◽  
pp. 9528-9536 ◽  
Author(s):  
Chiao-Wei Tseng ◽  
Ding-Chi Huang ◽  
Yu-Tai Tao
Keyword(s):  
Thin Film ◽  
Gold Nanoparticles ◽  
Thin Film Transistors ◽  
Floating Gate ◽  
Functionalized Gold Nanoparticles

Total Gain Recovery in Floating Gate Thin-Film Transistors for Neuromorphic and Edge Computing

2020 ◽  
Vol MA2020-02 (28) ◽  
pp. 1947-1947
Author(s):  
Eva Bestelink ◽  
Olivier de Sagazan ◽  
Radu Alexandru Sporea
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Edge Computing ◽  
Floating Gate ◽  
Total Gain ◽  
Gain Recovery

Studies of Gold Nanoparticles as Precursors to Printed Conductive Features for Thin-Film Transistors

2006 ◽  
Vol 18 (19) ◽  
pp. 4627-4632 ◽  
Author(s):  
Yiliang Wu ◽  
Yuning Li ◽  
Ping Liu ◽  
Sandra Gardner ◽  
Beng S. Ong
Keyword(s):  
Thin Film ◽  
Gold Nanoparticles ◽  
Thin Film Transistors

Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles

2010 ◽  
Vol 12 (12) ◽  
pp. 1966-1969 ◽  
Author(s):  
Byoungjun Park ◽  
Kyoungah Cho ◽  
Sungsu Kim ◽  
Sangsig Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Floating Gate ◽  
Zno Thin Film ◽  
Al Nanoparticles ◽  
Floating Gate Memory

Memory Devices Based on the Nanoparticle Silicon Floating Gate Double-Barrier Structure

2013 ◽  
Vol 773 ◽  
pp. 664-667
Author(s):  
Zhao Jun Guo ◽  
Li Qiang Guo ◽  
Guo Dong Wu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Chemical Vapor ◽  
Charge Carrier Mobility ◽  
Floating Gate ◽  
Memory Devices ◽  
Double Barrier ◽  
Floating Gate Memory ◽  
High Charge Carrier Mobility

Thin film transistors with nanoparticles silicon floating-gate are fabricated by plasma enhanced chemical vapor deposition. It should be noted that SiO2acts as both a tunneling and a blocking layer. Meanwhile, some np-Si dots are embedded within SiO2layers. The electrical characteristic of the devices are measured by semiconductor parameter analyzer at room temperature. These Thin film transistors show a good device performance with a high charge-carrier mobility of 33 cm2/vs and a large on/off ratio of 1.2×106. Moreover, the capability of written and erasing was demonstrated. This indicates that thin film transistors can be operated as rewritable nonvolatile floating gate memory devices.

Three-Terminal Floating-Gate Cell for Threshold-Voltage Control of Organic Thin-Film Transistors

2021 ◽  
Vol 68 (3) ◽  
pp. 1088-1092
Author(s):  
Kareem Mansour ◽  
Samar Elsaegh ◽  
Ute Zschieschang ◽  
Hagen Klauk ◽  
Ghada H. Ibrahim
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Voltage Control ◽  
Organic Thin Film Transistors ◽  
Floating Gate ◽  
Organic Thin Film

Room-Temperature Printing of Organic Thin-Film Transistors with π-Junction Gold Nanoparticles

2014 ◽  
Vol 24 (31) ◽  
pp. 4886-4892 ◽  
Author(s):  
Takeo Minari ◽  
Yuki Kanehara ◽  
Chuan Liu ◽  
Kenji Sakamoto ◽  
Takeshi Yasuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Gold Nanoparticles ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film
Sign in / Sign up

Export Citation Format

Share Document