Total Gain Recovery in Floating Gate Thin-Film Transistors for Neuromorphic and Edge Computing

Thin film transistors with nanoparticles silicon floating-gate are fabricated by plasma enhanced chemical vapor deposition. It should be noted that SiO2acts as both a tunneling and a blocking layer. Meanwhile, some np-Si dots are embedded within SiO2layers. The electrical characteristic of the devices are measured by semiconductor parameter analyzer at room temperature. These Thin film transistors show a good device performance with a high charge-carrier mobility of 33 cm2/vs and a large on/off ratio of 1.2×106. Moreover, the capability of written and erasing was demonstrated. This indicates that thin film transistors can be operated as rewritable nonvolatile floating gate memory devices.

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Nonvolatile Memory Thin Film Transistors using CdSe/ZnS Quantum Dots-PMMA Blend Layer as Floating Gate

10.7567/ssdm.2011.b-4-3 ◽

2011 ◽

Author(s):

H. C. Yu ◽

Y. C. Chen ◽

C. Y. Huang ◽

H. C. Yan ◽

Y. K. Su

Keyword(s):

Thin Film ◽

Quantum Dots ◽

Thin Film Transistors ◽

Nonvolatile Memory ◽

Floating Gate

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Azobenzene-Functionalized Gold Nanoparticles as Hybrid Double-Floating-Gate in Pentacene Thin-Film Transistors/Memories with Enhanced Response, Retention, and Memory Windows

ACS Applied Materials & Interfaces ◽

10.1021/am4023253 ◽

2013 ◽

Vol 5 (19) ◽

pp. 9528-9536 ◽

Cited By ~ 27

Author(s):

Chiao-Wei Tseng ◽

Ding-Chi Huang ◽

Yu-Tai Tao

Keyword(s):

Thin Film ◽

Gold Nanoparticles ◽

Thin Film Transistors ◽

Floating Gate ◽

Functionalized Gold Nanoparticles

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Three-Terminal Floating-Gate Cell for Threshold-Voltage Control of Organic Thin-Film Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3050138 ◽

2021 ◽

Vol 68 (3) ◽

pp. 1088-1092

Author(s):

Kareem Mansour ◽

Samar Elsaegh ◽

Ute Zschieschang ◽

Hagen Klauk ◽

Ghada H. Ibrahim

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Voltage Control ◽

Organic Thin Film Transistors ◽

Floating Gate ◽

Organic Thin Film

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Effective performance improvement of organic thin film transistors with multi-layer modifications

The European Physical Journal Applied Physics ◽

10.1051/epjap/2020200138 ◽

2020 ◽

Vol 91 (3) ◽

pp. 30201

Author(s):

Hang Yu ◽

Jianlin Zhou ◽

Yuanyuan Hao ◽

Yao Ni

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Performance Enhancement ◽

Organic Thin Film Transistors ◽

Electrical Performance ◽

Hole Injection ◽

Organic Thin Film ◽

Effective Performance ◽

Significant Performance ◽

P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

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