Molecular Orbital Studies of Titanium Nitride Chemical Vapor Deposition:  Imido Dimer Formation and Elimination Reactions

2001 ◽  
Vol 13 (3) ◽  
pp. 1095-1100 ◽  
Author(s):  
Jason B. Cross ◽  
Stanley M. Smith ◽  
H. Bernhard Schlegel
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Molecular Orbital ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Dimer Formation ◽  
Elimination Reactions

Molecular orbital studies of titanium nitride chemical vapor deposition: gas phase β-elimination

2001 ◽  
Vol 340 (3-4) ◽  
pp. 343-347 ◽  
Author(s):  
Jason B. Cross ◽  
H.Bernhard Schlegel
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Gas Phase ◽  
Molecular Orbital ◽  
Vapor Deposition ◽  
Chemical Vapor

Laser-assisted chemical vapor deposition of titanium nitride films

1998 ◽  
Vol 84 (1) ◽  
pp. 596-599 ◽  
Author(s):  
Seiji Ishihara ◽  
Mitsugu Hanabusa
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor

scholarly journals Deposition of titanium nitride on porous glass by plasma-enhanced chemical vapor deposition.

Shinku ◽  
1991 ◽  
Vol 34 (3) ◽  
pp. 335-338
Author(s):  
Shigeharu TAMURA ◽  
Tetsuo YAZAWA ◽  
Toshiyuki MIHARA ◽  
Sabro KIMURA ◽  
Tadashi ISHIDA ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Porous Glass ◽  
Vapor Deposition ◽  
Chemical Vapor

Photochemical depassivation of hydrogenated (100) nitrogen surface of cubic boron nitride

1997 ◽  
Vol 12 (7) ◽  
pp. 1675-1677 ◽  
Author(s):  
Shojiro Komatsu
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Molecular Orbital ◽  
Vapor Deposition ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Molecular Orbital Calculations ◽  
Lowest Unoccupied Molecular Orbital

The passivation of the nitrogen top-layered (100) surface of cBN by hydrogen was theoretically predicted recently to be related to the difficulty of chemical vapor deposition of cubic boron nitride. The possibility of photochemical depassivation of this surface was suggested by the anti-bonding nature of the surface H–N bonds at the lowest unoccupied molecular orbital; that was demonstrated by AM1 molecular orbital calculations using large cBN clusters such as B30N32H64(2+) and B30N32H62 (2BH3).

The Utility of Laser Light Scattering in Assessing the Mixability of Reagents for Chemical Vapor Deposition

1993 ◽  
Vol 324 ◽  
Author(s):  
Bin Ni ◽  
Gene P. Reck ◽  
James W. Proscia
Keyword(s):  
Chemical Vapor Deposition ◽  
Light Scattering ◽  
Titanium Nitride ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Laser Light ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Laser Light Scattering ◽  
Tin Oxide Films

AbstractThe premixability of reagents used in chemical vapor deposition reactors is important to insure that gas feed lines and nozzles do not become clogged with particulates during operation. Even if reactants are to be kept separate until introduced into a reaction chamber, it is desirable to limit the number of particles formed. A reactor which utilizes laser light scattering to monitor particulate formation when gaseous reagents are mixed is described. The reaction of tin (IV) chloride with water is commonly used to produce tin oxide films by chemical vapor deposition. It was found by the light scattering experiment that at temperatures above about 110°C the number of particulates formed is greatly reduced. Therefore, it would be most desirable that these reagents be mixed above this temperature when depositing tin oxide from this reaction. The reaction of titanium tetrachloride with various amine was also investigated by this method. This reaction has been demonstrated to produce titanium nitride above 450°C. For each case, it was observed that there was a temperature above which the number of particulates was significantly reduced. This temperature was always below the optimal temperature for producing titanium nitride films.

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