Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Process Using Group VIII Metal Catalysts

2007 ◽  
Vol 19 (23) ◽  
pp. 5531-5537 ◽  
Author(s):  
Siddarth G. Sundaresan ◽  
Albert V. Davydov ◽  
Mark D. Vaudin ◽  
Igor Levin ◽  
James E. Maslar ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Microwave Heating ◽  
Transport Process ◽  
Metal Catalysts ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Group Viii ◽  
Group Viii Metal

High thermal conductivity of pure dense SiC ceramics prepared via HTPVT

2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Grain Size ◽  
Phase Composition ◽  
Room Temperature ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Substrate ◽  
Sic Ceramics ◽  
Evolution Of Microstructure

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide

2004 ◽  
Vol 457-460 ◽  
pp. 55-58 ◽  
Author(s):  
Peter J. Wellmann ◽  
Z.G. Herro ◽  
Sakwe Aloysius Sakwe ◽  
Pierre M. Masri ◽  
M.V. Bogdanov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vapor Transport ◽  
Physical Vapor Transport

Hydrogenation of α,β-unsaturated carbonyls: Acrolein hydrogenation on Group VIII metal catalysts

1993 ◽  
Vol 78 (2) ◽  
pp. 211-226 ◽  
Author(s):  
Bernard Coq ◽  
François Figueras ◽  
Patrick Geneste ◽  
Claude Moreau ◽  
Patrice Moreau ◽  
...  
Keyword(s):  
Metal Catalysts ◽  
Group Viii ◽  
Group Viii Metal ◽  
Unsaturated Carbonyls

scholarly journals Chemo-Selectivity of Group-VIII Metal Catalysts in Hydrogenation of Nonconjugated Enones

1987 ◽  
Vol 60 (5) ◽  
pp. 1721-1726 ◽  
Author(s):  
Jun-ichi Ishiyama ◽  
Satoshi Maeda ◽  
Kazuhiro Takahashi ◽  
Yasuhisa Senda ◽  
Shin Imaizumi
Keyword(s):  
Metal Catalysts ◽  
Group Viii ◽  
Group Viii Metal

Enlargement of Silicon Carbide Lely Platelet by Physical Vapor Transport Technique

2013 ◽  
Vol 28 (11) ◽  
pp. 1248-1252 ◽  
Author(s):  
Yonggui Shi ◽  
Xinghua Yang ◽  
Dong Wang ◽  
Peng Zhang ◽  
Jincheng Zhang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Technique

Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer

2008 ◽  
Vol 600-603 ◽  
pp. 301-304 ◽  
Author(s):  
Yi Chen ◽  
Ning Zhang ◽  
Xian Rong Huang ◽  
David R. Black ◽  
Michael Dudley
Keyword(s):  
Silicon Carbide ◽  
Grazing Incidence ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Screw Dislocations ◽  
X Ray ◽  
Pyramidal Plane

The density and sense distribution of elementary threading screw dislocations in a physical vapor transport grown 3-inch 4H silicon carbide wafer have been studied. The density of TSDs ranges between 1.6×103/cm2 and 7.1×103/cm2 and the lowest density is observed at positions approximately half radius off the wafer center. The dislocation sense of elementary threading screw dislocations can be readily revealed by the asymmetric contrast of their images in grazing-incidence x-ray topographs using pyramidal plane reflections. The circumferential and radial distributions of the sense of elementary threading screw dislocations have been studied and no clear trends are observed in either distribution.

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