Enlargement of Silicon Carbide Lely Platelet by Physical Vapor Transport Technique

2013 ◽  
Vol 28 (11) ◽  
pp. 1248-1252 ◽  
Author(s):  
Yonggui Shi ◽  
Xinghua Yang ◽  
Dong Wang ◽  
Peng Zhang ◽  
Jincheng Zhang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Technique

Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique

2012 ◽  
Vol 349 (1) ◽  
pp. 68-74 ◽  
Author(s):  
Yonggui Shi ◽  
Jianfeng Yang ◽  
Hulin Liu ◽  
Peiyun Dai ◽  
Bobo Liu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Type Silicon ◽  
Silicon Carbide Whiskers ◽  
Transport Technique

Growth of Silicon Carbide Bulk Crystals with a Modified Physical Vapor Transport Technique

2006 ◽  
Vol 12 (8-9) ◽  
pp. 557-561 ◽  
Author(s):  
R. Müller ◽  
U. Künecke ◽  
D. Queren ◽  
S. A. Sakwe ◽  
P. Wellmann
Keyword(s):  
Silicon Carbide ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Bulk Crystals ◽  
Transport Technique

High thermal conductivity of pure dense SiC ceramics prepared via HTPVT

2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Grain Size ◽  
Phase Composition ◽  
Room Temperature ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Substrate ◽  
Sic Ceramics ◽  
Evolution Of Microstructure

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide

2004 ◽  
Vol 457-460 ◽  
pp. 55-58 ◽  
Author(s):  
Peter J. Wellmann ◽  
Z.G. Herro ◽  
Sakwe Aloysius Sakwe ◽  
Pierre M. Masri ◽  
M.V. Bogdanov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vapor Transport ◽  
Physical Vapor Transport

Parameters of substrates–single crystals of ZnTe and Cd1−xZnxTe (x<0.25), obtained by physical vapor transport technique (PVT)

1999 ◽  
Vol 197 (3) ◽  
pp. 423-426 ◽  
Author(s):  
A Mycielski ◽  
A Szadkowski ◽  
E Łusakowska ◽  
L Kowalczyk ◽  
J Domagała ◽  
...  
Keyword(s):  
Single Crystals ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Technique

Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals

2010 ◽  
Vol 645-648 ◽  
pp. 63-66 ◽  
Author(s):  
Guoli L. Sun ◽  
Irina G. Galben-Sandulache ◽  
Thierry Ouisse ◽  
Jean Marc Dedulle ◽  
Michel Pons ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Seeded Growth ◽  
Grown Layer ◽  
Continuous Feed ◽  
Transport Technique

The Continuous Feed-Physical Vapor Transport Technique (CF-PVT) was optimized by considering the heating, thermal insulation and the geometry of growth cavity. The effects of seeds on the surface morphology of the grown layer have been discussed. We successfully grew 3C-SiC bulk with a diameter of 7.0 mm and 3.3 mm in height with a high growth rate of 0.8 mm/h by the CF-PVT technique.

Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Process Using Group VIII Metal Catalysts

2007 ◽  
Vol 19 (23) ◽  
pp. 5531-5537 ◽  
Author(s):  
Siddarth G. Sundaresan ◽  
Albert V. Davydov ◽  
Mark D. Vaudin ◽  
Igor Levin ◽  
James E. Maslar ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Microwave Heating ◽  
Transport Process ◽  
Metal Catalysts ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Group Viii ◽  
Group Viii Metal

Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique

2011 ◽  
Vol 679-680 ◽  
pp. 169-172
Author(s):  
Georgios Zoulis ◽  
Jian Wu Sun ◽  
Irina G. Galben-Sandulache ◽  
Guoli L. Sun ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Low Temperature ◽  
Small Diameter ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Optical Investigation ◽  
Continuous Feed ◽  
Transport Technique

We present the results of an optical investigation performed using low temperature photomuminescence and Raman spectroscopy on bulk 3C-SiC samples grown with the Continuous-Feed Physical Vapor Transport technique, using a small diameter neck to filter the defects and improve the as-grown material.

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