Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

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Enlargement of Silicon Carbide Lely Platelet by Physical Vapor Transport Technique

Materials and Manufacturing Processes ◽

10.1080/10426914.2013.840911 ◽

2013 ◽

Vol 28 (11) ◽

pp. 1248-1252 ◽

Cited By ~ 2

Author(s):

Yonggui Shi ◽

Xinghua Yang ◽

Dong Wang ◽

Peng Zhang ◽

Jincheng Zhang ◽

...

Keyword(s):

Silicon Carbide ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Transport Technique

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Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Process Using Group VIII Metal Catalysts

Chemistry of Materials ◽

10.1021/cm071213r ◽

2007 ◽

Vol 19 (23) ◽

pp. 5531-5537 ◽

Cited By ~ 62

Author(s):

Siddarth G. Sundaresan ◽

Albert V. Davydov ◽

Mark D. Vaudin ◽

Igor Levin ◽

James E. Maslar ◽

...

Keyword(s):

Silicon Carbide ◽

Microwave Heating ◽

Transport Process ◽

Metal Catalysts ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Group Viii ◽

Group Viii Metal

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Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.301 ◽

2008 ◽

Vol 600-603 ◽

pp. 301-304 ◽

Cited By ~ 8

Author(s):

Yi Chen ◽

Ning Zhang ◽

Xian Rong Huang ◽

David R. Black ◽

Michael Dudley

Keyword(s):

Silicon Carbide ◽

Grazing Incidence ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Screw Dislocations ◽

X Ray ◽

Pyramidal Plane

The density and sense distribution of elementary threading screw dislocations in a physical vapor transport grown 3-inch 4H silicon carbide wafer have been studied. The density of TSDs ranges between 1.6×103/cm2 and 7.1×103/cm2 and the lowest density is observed at positions approximately half radius off the wafer center. The dislocation sense of elementary threading screw dislocations can be readily revealed by the asymmetric contrast of their images in grazing-incidence x-ray topographs using pyramidal plane reflections. The circumferential and radial distributions of the sense of elementary threading screw dislocations have been studied and no clear trends are observed in either distribution.

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Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2012.03.055 ◽

2012 ◽

Vol 349 (1) ◽

pp. 68-74 ◽

Cited By ~ 10

Author(s):

Yonggui Shi ◽

Jianfeng Yang ◽

Hulin Liu ◽

Peiyun Dai ◽

Bobo Liu ◽

...

Keyword(s):

Silicon Carbide ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Type Silicon ◽

Silicon Carbide Whiskers ◽

Transport Technique

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Kinetics and Thermodynamics of Silicon Carbide Physical Vapor Transport Reactions: A Quantum Chemistry and Kinetic Monte Carlo Approach

Chemical Physics ◽

10.1016/j.chemphys.2021.111421 ◽

2021 ◽

pp. 111421

Author(s):

Ahmed Abubakar Alao ◽

Wen-Dung Hsu

Keyword(s):

Silicon Carbide ◽

Monte Carlo ◽

Quantum Chemistry ◽

Kinetic Monte Carlo ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Kinetics And Thermodynamics ◽

Monte Carlo Approach

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Hrtem Characterization of 6H-15R Polytype Boundaries in Silicon Carbide Grown by Physical Vapor Transport

MRS Proceedings ◽

10.1557/proc-442-655 ◽

1996 ◽

Vol 442 ◽

Author(s):

E. K. Sanchez ◽

M. De Graef ◽

W. Qian ◽

M. Skowronski

Keyword(s):

Electron Microscopy ◽

Silicon Carbide ◽

Cross Section ◽

Stacking Faults ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Stacking Sequence ◽

Fault Density ◽

Transmission Electron

AbstractThe interface between 6H and 15R polytypes of silicon carbide, grown by Physical Vapor Transport, was studied by high-resolution transmission electron microscopy. The sample was investigated in cross-section cut perpendicular to the [11.0] irection. The atomic stacking sequence at the interface of the polytypes was determined. Polytype boundaries with orientations parallel and perpendicular to the 6H c-axis were investigated. Stacking faults associated with low angle grain boundaries in both 6H and 15R regions were observed and the 15R regions systematically showed a higher fault density than the 6H regions.

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