Easily Synthesized Naphthalene Tetracarboxylic Diimide Semiconductors with High Electron Mobility in Air

2008 ◽  
Vol 20 (11) ◽  
pp. 3609-3616 ◽  
Author(s):  
Kevin C. See ◽  
Chad Landis ◽  
Amy Sarjeant ◽  
Howard E. Katz

2015 ◽  
Vol 107 (19) ◽  
pp. 193506 ◽  
Author(s):  
M. Ťapajna ◽  
O. Hilt ◽  
E. Bahat-Treidel ◽  
J. Würfl ◽  
J. Kuzmík




2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  


2021 ◽  
Vol 33 (10) ◽  
pp. 2170075
Author(s):  
Ze‐Fan Yao ◽  
Yu‐Qing Zheng ◽  
Jin‐Hu Dou ◽  
Yang Lu ◽  
Yi‐Fan Ding ◽  
...  




Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.



Author(s):  
Keitaro Iguchi ◽  
Tsubasa Mikie ◽  
Masahiko Saito ◽  
Kimihiro Komeyama ◽  
Takuji Seo ◽  
...  


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