Dramatic Enhancement of Hyperpolarized Xenon-129 2D-NMR Exchange Cross-Peak Signals in Nanotubes by Interruption of the Gas Flow

2008 ◽  
Vol 130 (8) ◽  
pp. 2390-2391 ◽  
Author(s):  
Chi-Yuan Cheng ◽  
Jessica Pfeilsticker ◽  
Clifford R. Bowers

2006 ◽  
pp. 1921 ◽  
Author(s):  
Piero Sozzani ◽  
Silvia Bracco ◽  
Angiolina Comotti ◽  
Michele Mauri ◽  
Roberto Simonutti ◽  
...  


1988 ◽  
Vol 26 (5) ◽  
pp. 367-372 ◽  
Author(s):  
V. V. Krishnamurthy ◽  
John E. Casida




1997 ◽  
Vol 101 (15) ◽  
pp. 2778-2786 ◽  
Author(s):  
Nikolai V. Shokhirev ◽  
Tatjana Kh. Shokhireva ◽  
Jayapal Reddy Polam ◽  
C. Todd Watson ◽  
Kamran Raffii ◽  
...  




Author(s):  
N. David Theodore ◽  
Mamoru Tomozane ◽  
Ming Liaw

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.



Author(s):  
A. R. Landa Canovas ◽  
L.C. Otero Diaz ◽  
T. White ◽  
B.G. Hyde

X-Ray diffraction revealed two intermediate phases in the system MnS+Er2S3,:MnEr2S4= MnS.Er2S3, and MnEr4S7= MnS.2Er2S3. Their structures may be described as NaCl type, chemically twinned at the unit cell level, and isostructural with CaTi2O4, and Y5S7 respectively; i.e. {l13} NaCl twin band widths are (4,4) and (4,3).The present study was to search for structurally-related (twinned B.) structures and or possible disorder, using the more sensitive and appropiate technigue of electron microscopy/diffraction.A sample with nominal composition MnEr2S4 was made by heating Mn3O4 and Er2O3 in a graphite crucible and a 5% H2S in Ar gas flow at 1500°C for 4 hours. A small amount of this material was thenannealed, in an alumina crucible, contained in sealed evacuated silica tube, for 24 days at 1100°C. Both samples were studied by X-ray powder diffraction, and in JEOL 2000 FX and 4000 EX microscopes.



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