Photoluminescence of TiO2: Effect of UV Light and Adsorbed Molecules on Surface Band Structure

2011 ◽  
Vol 134 (1) ◽  
pp. 324-332 ◽  
Author(s):  
Ana Stevanovic ◽  
Michael Büttner ◽  
Zhen Zhang ◽  
John T. Yates
Keyword(s):  
Band Structure ◽  
Uv Light ◽  
Surface Band ◽  
Adsorbed Molecules

CHANGES INDUCED IN THE SURFACE ELECTRONIC STRUCTURE OF Be(0001) AFTER Si ADSORPTION

2002 ◽  
Vol 09 (02) ◽  
pp. 687-691
Author(s):  
L. I. JOHANSSON ◽  
C. VIROJANADARA ◽  
T. BALASUBRAMANIAN
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Band Gap ◽  
Electronic Properties ◽  
Surface State ◽  
Core Level ◽  
Clean Surface ◽  
Core Level Spectrum ◽  
Surface Band ◽  
Surface Electronic Structure

A study of effects induced in the Be 1s core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be 1s spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At [Formula: see text] the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Å-1 along both the [Formula: see text] and [Formula: see text] directions. At [Formula: see text] and beyond [Formula: see text] only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.

Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)

2005 ◽  
pp. 547-550
Author(s):  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley ◽  
A. Tadich ◽  
L. Broekman ◽  
...  
Keyword(s):  
Band Structure ◽  
Surface Band

Atom–surface band structure and bound-state resonances

1998 ◽  
Vol 409 (1) ◽  
pp. 130-136 ◽  
Author(s):  
M.Cristina Vargas ◽  
W.Luis Mochán
Keyword(s):  
Band Structure ◽  
Bound State ◽  
Surface Band

Unassisted Water Splitting Exceeding 9% Solar-to-Hydrogen Conversion Efficiency by Cu(In, Ga)(S, Se)2 Photocathode with Modified Surface Band Structure and Halide Perovskite Solar Cell

2020 ◽  
Vol 3 (3) ◽  
pp. 2296-2303 ◽  
Author(s):  
Bonhyeong Koo ◽  
Daehan Kim ◽  
Passarut Boonmongkolras ◽  
Seong Ryul Pae ◽  
Segi Byun ◽  
...  
Keyword(s):  
Solar Cell ◽  
Band Structure ◽  
Water Splitting ◽  
Conversion Efficiency ◽  
Perovskite Solar Cell ◽  
Surface Band ◽  
Modified Surface ◽  
Halide Perovskite

scholarly journals Influence of the surface band structure in photoelectron emission by ultra-short laser pulses

2014 ◽  
Vol 488 (3) ◽  
pp. 032014
Author(s):  
C A Ríos Rubiano ◽  
M S Gravielle ◽  
D M Mitnik ◽  
V M Silkin
Keyword(s):  
Band Structure ◽  
Laser Pulses ◽  
Photoelectron Emission ◽  
Surface Band ◽  
Short Laser Pulses

scholarly journals Surface band structure of aryl-diazonium modified p-Si electrodes determined by X-ray photoelectron spectroscopy and electrochemical measurements

RSC Advances ◽  
2013 ◽  
Vol 3 (45) ◽  
pp. 23649 ◽  
Author(s):  
Thomas Cottineau ◽  
Mario Morin ◽  
Daniel Bélanger
Keyword(s):  
Band Structure ◽  
Photoelectron Spectroscopy ◽  
Electrochemical Measurements ◽  
Surface Band ◽  
X Ray

scholarly journals The interplay between the surface band structure and possible surface reconstructions of Mo(112)

2000 ◽  
Vol 14 (4) ◽  
pp. 747-755 ◽  
Author(s):  
T. McAvoy ◽  
J. Zhang ◽  
C. Waldfried ◽  
D.N. McIlroy ◽  
P.A. Dowben ◽  
...  
Keyword(s):  
Band Structure ◽  
Surface Band ◽  
Surface Reconstructions

Quasiparticle surface band structure and photoelectric threshold of Ge(111)-2×1

1991 ◽  
Vol 43 (14) ◽  
pp. 12146-12149 ◽  
Author(s):  
Xuejun Zhu ◽  
Steven G. Louie
Keyword(s):  
Band Structure ◽  
Surface Band ◽  
Photoelectric Threshold

scholarly journals Photoemission study of the surface band structure of the reconstructed Mo(001) surface

1993 ◽  
Vol 47 (20) ◽  
pp. 13594-13598 ◽  
Author(s):  
K. S. Shin ◽  
C. Y. Kim ◽  
J. W. Chung ◽  
S. C. Hong ◽  
S. K. Lee ◽  
...  
Keyword(s):  
Band Structure ◽  
Surface Band ◽  
Photoemission Study

Band bending near the surface in GaN as detected by a charge sensitive probe

2003 ◽  
Vol 798 ◽  
Author(s):  
S. Sabuktagin ◽  
M. A. Reshchikov ◽  
D. K. Johnstone ◽  
H. Morkoç
Keyword(s):  
Uv Light ◽  
Surface States ◽  
Surface Barrier ◽  
Nitrogen Laser ◽  
Free Electrons ◽  
Surface Band ◽  
Band Bending ◽  
Surface Potential Measurements ◽  
Si Doped ◽  
A Charge

ABSTRACTWe measured the absolute value of the surface band bending in GaN layers grown by molecular beam epitaxy with a charge sensitive surface microprobe. Surface potential measurements showed an upward band bending from 0.7 to 1.4 eV in undoped and Si-doped GaN. The samples stored in dark for one week showed an increase in band bending by up to 0.1 eV. The effect of ultraviolet (UV) exposure (with a lamp or a pulsed nitrogen laser) on band bending was also studied. Typically, the surface barrier decreased by about 0.2 – 0.5 eV under UV light. The barrier was restored very slowly (by a logarithmic law) in the dark at room temperature. These and other similar phenomena are tentatively attributed to thermionic transfer of free electrons from the bulk to the surface states. Photo-induced desorption of oxygen may also play a role in the observed effects.

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