Cation Dimerization in a 3d1 Honeycomb Lattice System

Author(s):  
Hajime Yamamoto ◽  
Sachiko Kamiyama ◽  
Ikuya Yamada ◽  
Hiroyuki Kimura
2007 ◽  
Vol 310 (2) ◽  
pp. e389-e391 ◽  
Author(s):  
Yoko Miura ◽  
Riu Hirai ◽  
Toshiaki Fujita ◽  
Yoshiaki Kobayashi ◽  
Masatoshi Sato

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Tsuneya Yoshida ◽  
Yasuhiro Hatsugai

AbstractWe elucidate that diffusive systems, which are widely found in nature, can be a new platform of the bulk-edge correspondence, a representative topological phenomenon. Using a discretized diffusion equation, we demonstrate the emergence of robust edge states protected by the winding number for one- and two-dimensional systems. These topological edge states can be experimentally accessible by measuring diffusive dynamics at edges. Furthermore, we discover a novel diffusion phenomenon by numerically simulating the distribution of temperatures for a honeycomb lattice system; the temperature field with wavenumber $$\pi $$ π cannot diffuse to the bulk, which is attributed to the complete localization of the edge state.


2020 ◽  
Vol 16 (4) ◽  
pp. 595-607 ◽  
Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Shahrizal Rusli ◽  
Nurul Ezaila Alias ◽  
...  

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, an overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistor (FET) structures is also discussed. Theoretical studies of silicene have shown promising results for their application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.


2021 ◽  
Vol 103 (18) ◽  
Author(s):  
Feng Ye ◽  
Zachary Morgan ◽  
Wei Tian ◽  
Songxue Chi ◽  
Xiaoping Wang ◽  
...  

2021 ◽  
pp. 168440
Author(s):  
Tohru Kawarabayashi ◽  
Yuya Inoue ◽  
Ryo Itagaki ◽  
Yasuhiro Hatsugai ◽  
Hideo Aoki

2020 ◽  
Vol 2 (2) ◽  
Author(s):  
Shang-Shun Zhang ◽  
Cristian D. Batista ◽  
Gábor B. Halász

Sign in / Sign up

Export Citation Format

Share Document