scholarly journals Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

2015 ◽  
Vol 137 (21) ◽  
pp. 6897-6905 ◽  
Author(s):  
Ha-Chul Shin ◽  
Yamujin Jang ◽  
Tae-Hoon Kim ◽  
Jun-Hae Lee ◽  
Dong-Hwa Oh ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Crystal ◽  
Band Gap ◽  
Epitaxial Growth ◽  
Graphene Layer ◽  
Wide Band ◽  
Wide Band Gap

Interaction-determined sensitization photodegradation of dye complexes by boron nitride under visible light irradiation: experimental and theoretical studies

2020 ◽  
Vol 44 (22) ◽  
pp. 9238-9247
Author(s):  
Xin Ji ◽  
Yong Guo ◽  
Shugui Hua ◽  
Huiyan Li ◽  
Sunchen Zhang
Keyword(s):  
Boron Nitride ◽  
Visible Light ◽  
Band Gap ◽  
Visible Light Irradiation ◽  
Wide Band ◽  
Light Irradiation ◽  
Theoretical Studies ◽  
Wide Band Gap ◽  
First Time ◽  
Experimental And Theoretical Studies

In this paper, the sensitization photodegradation of single and mixed dyes by wide band gap boron nitride (BN, 3.94 eV) under visible light irradiation has been investigated for the first time.

Laser ablation of wide band-gap materials: The role of defects in single crystal MgO

1993 ◽  
Author(s):  
J. T. Dickinson ◽  
L. C. Jensen ◽  
R. L. Webb ◽  
S. C. Langford
Keyword(s):  
Laser Ablation ◽  
Single Crystal ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap

UNIFORM BENDING EFFECT ON ELECTRONIC PROPERTIES OF BORON NITRIDE NANORIBBONS: A COMPUTATIONAL INVESTIGATION

Nano LIFE ◽  
2012 ◽  
Vol 02 (02) ◽  
pp. 1240005
Author(s):  
YUNLONG LIAO ◽  
ZHONGFANG CHEN
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Electronic Properties ◽  
First Principles ◽  
Wide Band ◽  
Band Gaps ◽  
Computational Investigation ◽  
Wide Band Gap ◽  
Bending Effect ◽  
Boron Nitride Nanoribbons

First-principles computations were performed to investigate the uniform bending effect on the electronic properties of armchair boron nitride nanoribbons (aBNNRs) with experimentally obtained width. For both bare and hydrogen-terminated aBNNRs, the band gaps only slightly depend on the uniform bending. The insensitivity of the band structures of BNNRs to the uniform bending makes them ideal materials when their wide band gap character is desired.

Challenges and State-of-the-Art of Oxides on SiC

2000 ◽  
Vol 640 ◽  
Author(s):  
Lori Lipkin ◽  
Mrinal Das ◽  
John Palmour
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
High Voltage ◽  
State Of The Art ◽  
Wide Band ◽  
High Current ◽  
Power Devices ◽  
Wide Band Gap ◽  
Single Crystal Sic ◽  
Lower Temperature

ABSTRACTSingle crystal SiC is a wide band-gap semiconductor with material characteristics that make it quite suitable for high voltage and high current applications. However, these devices are currently limited by their passivation. Significant improvements have been made with oxides on SiC. The most notable oxide processes are the re-oxidation anneal, a stacked ONO dielectric, and nitridation using an NO or N2O anneal. Additional improvements in lateral MOSFET mobility have been achieved using a surface channel implant, and lower temperature implant activation anneals. However, the passivation remains a significant limitation for SiC power devices.

Structural analogues of graphyne family: New types of boron nitride sheets with wide band gap and strong UV absorption

2011 ◽  
Vol 502 (4-6) ◽  
pp. 217-221 ◽  
Author(s):  
Xinrui Cao ◽  
Yunsong Li ◽  
Xuan Cheng ◽  
Ying Zhang
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Wide Band ◽  
Uv Absorption ◽  
Wide Band Gap ◽  
Structural Analogues

Epitaxial growth of wide-band-gap ZnGa2O4 films by mist chemical vapor deposition

2014 ◽  
Vol 386 ◽  
pp. 190-193 ◽  
Author(s):  
Takayoshi Oshima ◽  
Mifuyu Niwa ◽  
Akira Mukai ◽  
Tomohito Nagami ◽  
Toshihisa Suyama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Band ◽  
Wide Band Gap

Transition of wide-band gap semiconductor h-BN(BN)/P heterostructure via single-atom-embedding

2020 ◽  
Vol 8 (28) ◽  
pp. 9755-9762 ◽  
Author(s):  
Itsuki Miyazato ◽  
Tanveer Hussain ◽  
Keisuke Takahashi
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
First Principles ◽  
Wide Band ◽  
Band Gaps ◽  
Single Atom ◽  
First Principles Calculations ◽  
Optoelectronic Materials ◽  
Wide Band Gap

The band gaps in boron nitride/phosphorene (h-BN/P) heterostructures are investigated by single-atom-embedding via first principles calculations. The modified heterostructures are potential optoelectronic materials with tunable band gaps.

Zn1−yCdySe1−xTexquaternary wide band‐gap alloys: Molecular beam epitaxial growth and optical properties

1991 ◽  
Vol 59 (10) ◽  
pp. 1206-1208 ◽  
Author(s):  
Maria J. S. P. Brasil ◽  
Maria C. Tamargo ◽  
R. E. Nahory ◽  
H. L. Gilchrist ◽  
R. J. Martin
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Wide Band ◽  
Wide Band Gap ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Insulating and optical properties of boron nitride for wide-band-gap III–N compounds

2003 ◽  
Vol 0 (7) ◽  
pp. 2470-2473
Author(s):  
H. Dumont ◽  
B. Bayle ◽  
B. Bonnetot
Keyword(s):  
Optical Properties ◽  
Boron Nitride ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
N Compounds
Sign in / Sign up

Export Citation Format

Share Document