Effect of Si–H Bond on the Gas-Phase Chemistry of Trimethylsilane in the Hot Wire Chemical Vapor Deposition Process

2011 ◽  
Vol 115 (37) ◽  
pp. 10290-10298 ◽  
Author(s):  
Y. J. Shi ◽  
X. M. Li ◽  
R. Toukabri ◽  
L. Tong
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Process ◽  
Hot Wire ◽  
Gas Phase Chemistry ◽  
Phase Chemistry ◽  
Vapor Deposition Process

scholarly journals Наращивание слоя Ge на структуру Si/SiO-=SUB=-2-=/SUB=-/Si (100) методом "горячей проволоки"

2020 ◽  
Vol 54 (10) ◽  
pp. 1129
Author(s):  
А.А. Сушков ◽  
Д.А. Павлов ◽  
С.А. Денисов ◽  
В.Ю. Чалков ◽  
Р.Н. Крюков ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Integrated Circuits ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
High Energy ◽  
Buffer Layers ◽  
Chemical Vapor Deposition Process ◽  
Hot Wire ◽  
Vapor Deposition Process

Ge/Si buffer layers grown at different temperatures on Si/SiO2/Si (100) substrates have been fabricated and studied. The Si buffer was grown via molecular beam epitaxy. The Ge layer was produced in a single stage via hot wire chemical vapor deposition process. Structural properties were investigated by high-resolution transmission electron microscopy and reflected high-energy electron diffraction. Such structures can be used in the future as a substrate for growth of high quality light-emitting structures compatible with silicon radiation-resistant integrated circuits. The paper shows the possibility of growth of a single crystal layer of Ge on Si/SiO2/Si (100) through a buffer layer of Si by the hot wire chemical vapor deposition process, and also demonstrates the difficulties that arise in the process of growth of Ge/Si layers on Si/SiO2/Si (100).

Gas Phase and Surface Kinetic Processes in Hot-Wire Chemical Vapor Deposition

2000 ◽  
Vol 609 ◽  
Author(s):  
J. K. Holt ◽  
M. Swiatek ◽  
D. G. Goodwin ◽  
Harry A. Atwater
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Direct Simulation Monte Carlo ◽  
Chemical Vapor ◽  
High Rate ◽  
Hot Wire ◽  
Gas Phase Chemistry ◽  
Partial Pressures ◽  
Phase Chemistry

ABSTRACTOne- and two-dimensional numerical simulations have been used to determine the parameters critical to high rate growth of high quality polycrystalline silicon via hot-wire chemical vapor deposition at silane partial pressures of 1-70 mTorr and a wire temperature of 2000°C. The Direct Simulation Monte Carlo method [1] was used, including gas-phase chemistry relevant for growth. Model predictions agree both qualitatively and quantitatively with experimental measurements.

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