Gas Phase and Surface Kinetic Processes in Hot-Wire Chemical Vapor Deposition
Keyword(s):
Hot Wire
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ABSTRACTOne- and two-dimensional numerical simulations have been used to determine the parameters critical to high rate growth of high quality polycrystalline silicon via hot-wire chemical vapor deposition at silane partial pressures of 1-70 mTorr and a wire temperature of 2000°C. The Direct Simulation Monte Carlo method [1] was used, including gas-phase chemistry relevant for growth. Model predictions agree both qualitatively and quantitatively with experimental measurements.
2011 ◽
Vol 115
(37)
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pp. 10290-10298
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2017 ◽
Vol 121
(47)
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pp. 26465-26471
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2018 ◽
2019 ◽
1995 ◽
Vol 86
(1-4)
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pp. 521-529
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1993 ◽
Vol 140
(6)
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pp. 1809-1813
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Keyword(s):
Keyword(s):