Chemical Vapor Deposition of Manganese Metallic Films on Silicon Oxide Substrates

2012 ◽  
Vol 116 (44) ◽  
pp. 23585-23595 ◽  
Author(s):  
Huaxing Sun ◽  
Francisco Zaera
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Metallic Films ◽  
Oxide Substrates

Local Self-Order Observed During Chemical Vapor Deposition of Silicon Quantum Dots for Application in Nanocrystal Memories

2004 ◽  
Vol 830 ◽  
Author(s):  
Rosaria A. Puglisi ◽  
Giuseppe Nicotra ◽  
Salvatore Lombardo ◽  
Barbara De Salvo ◽  
Cosimo Gerardi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Adatom Diffusion ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Oxide Substrates ◽  
Capture Mechanism ◽  
New Si

ABSTRACTA systematic study on the Si dot formation after chemical vapor deposition on silicon oxide substrates is presented. The process has been followed from the early stages of the dot formation up to 25% of coverages. Structural characterization has been performed by means of energy filtered transmission electron microscopy, which allowed us to observe dot sizes down to 0.5 nm in radius. The nanodots are shown to be surrounded by a depleted zone, where no new Si dots are observed to nucleate. This has been attributed to the adatoms capture mechanism by pre-existing dots, during the deposition. The dot radius and the capture size are shown to collapse onto the same curve, thus indicating the scaling behavior of the process. The adatom diffusion process is shown to restrict the number of nucleation sites, the final dot size and the dot position, thus driving the process toward partial self-order.

scholarly journals Microscopic evidence of strong interactions between chemical vapor deposited 2D MoS2 film and SiO2 growth template

2021 ◽  
Vol 8 (1) ◽  
Author(s):  
Woonbae Sohn ◽  
Ki Chang Kwon ◽  
Jun Min Suh ◽  
Tae Hyung Lee ◽  
Kwang Chul Roh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Spherical Aberration ◽  
Van Der Waals ◽  
Chemical Vapor ◽  
Interface Layer ◽  
Van Der Waals Interactions ◽  
Strong Interactions ◽  
Transition Electron Microscopy ◽  
Oxide Substrates

AbstractTwo-dimensional MoS2 film can grow on oxide substrates including Al2O3 and SiO2. However, it cannot grow usually on non-oxide substrates such as a bare Si wafer using chemical vapor deposition. To address this issue, we prepared as-synthesized and transferred MoS2 (AS-MoS2 and TR-MoS2) films on SiO2/Si substrates and studied the effect of the SiO2 layer on the atomic and electronic structure of the MoS2 films using spherical aberration-corrected scanning transition electron microscopy (STEM) and electron energy loss spectroscopy (EELS). The interlayer distance between MoS2 layers film showed a change at the AS-MoS2/SiO2 interface, which is attributed to the formation of S–O chemical bonding at the interface, whereas the TR-MoS2/SiO2 interface showed only van der Waals interactions. Through STEM and EELS studies, we confirmed that there exists a bonding state in addition to the van der Waals force, which is the dominant interaction between MoS2 and SiO2. The formation of S–O bonding at the AS-MoS2/SiO2 interface layer suggests that the sulfur atoms at the termination layer in the MoS2 films are bonded to the oxygen atoms of the SiO2 layer during chemical vapor deposition. Our results indicate that the S–O bonding feature promotes the growth of MoS2 thin films on oxide growth templates.

scholarly journals Chemical Vapor Deposition of Metallic Films Using Plasma Electrons as Reducing Agents

2019 ◽  
Author(s):  
Hama Nadhom ◽  
Daniel Lundin ◽  
Polla Rouf ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Argon Plasma ◽  
Film Surface ◽  
Chemical Vapor ◽  
Reducing Agents ◽  
Metallic Films ◽  
Metal Centers ◽  
Positive Valence ◽  
Precursor Molecules

Metallic thin films are key components in electronic devices and catalytic applications. Deposition of a conformal metallic thin film require using volatile precursor molecules in a chemical vapor deposition (CVD) process. The metal centers in such molecules typically have a positive valence, meaning that reduction of the metal centers is required on the film surface. Powerful molecular reducing agents for electropositive metals are scarce and hampers the exploration of CVD of electropositive metals. We present a new CVD method for depositing metallic films where free electrons in a plasma discharge are utilized to reduce the metal centers of chemisorbed precursor molecules. We demonstrate this method by depositing Fe, Co and Ni from their corresponding metallocenes using electrons from an argon plasma as a reducing agent.

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