Investigation of particle formation during the plasma enhanced chemical vapor deposition of amorphous silicon, oxide, and nitride films

1998 ◽  
Vol 16 (2) ◽  
pp. 483 ◽  
Author(s):  
N. P. Rao
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Particle Formation ◽  
Amorphous Silicon Oxide

PHOTOLUMINESCENCE FROM AMORPHOUS SILICON OXIDE FILMS PREPARED BY HFCVD TECHNIQUE

2001 ◽  
Vol 15 (17n19) ◽  
pp. 756-759 ◽  
Author(s):  
P. SALAZAR ◽  
F. CHÁVEZ ◽  
F. SILVA-ANDRADE ◽  
A. V. ILINSKII ◽  
N. MORALES ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Hydrogen Atoms ◽  
Hydrogen Incorporation ◽  
Oh Groups ◽  
Amorphous Silicon Oxide ◽  
Hot Filament

The photoluminescence (PL) properties of hydrogen (H) rich silicon oxide films prepared by hot filament enhanced chemical vapor deposition (HFCVD) have been studied. The observed PL change follow the change in the hydrogen incorporation, detected by transmission Fourier transfonn spectroscopy (FTIR). FTIR spectra show that the oxygen and hydrogen atoms are bonded to the same silicon atom. There is no evidence from the formation of OH groups.

Thermal Oxidation of Amorphous Silicon-Boron Alloy

1987 ◽  
Vol 105 ◽  
Author(s):  
W. M. Lau ◽  
R. Yang ◽  
B. Y. Tong ◽  
S. K. Wong
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Thermal Oxidation ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
X Ray ◽  
Pressure Chemical

AbstractThe thermal oxidation of amorphous silicon-boron alloy (prepared by low pressure chemical vapor deposition) with boron contents ranged from 0–40% at a temperature range of 25- 700 °C has been carried out. Crystalline silicon and polycrystalline boron have also been studied for comparison purposes. The resultant thin oxide overlayers were characterized by X-ray photoelectron spectroscopy. It was found that both the oxidation of Si and of B are enhanced by mixing of the two elements. The oxidation of boron is significantly slower than silicon. During oxidation of silicon-boron alloy, preferential oxidation of silicon occurs at the oxide/bulk interface and the silicon oxide overlayer advances into the bulk faster than the boron oxide.

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