Quantum Dot Light-Emitting Devices with Electroluminescence Tunable over the Entire Visible Spectrum

Nano Letters ◽  
2009 ◽  
Vol 9 (7) ◽  
pp. 2532-2536 ◽  
Author(s):  
Polina O. Anikeeva ◽  
Jonathan E. Halpert ◽  
Moungi G. Bawendi ◽  
Vladimir Bulović
2016 ◽  
Vol 98 ◽  
pp. 38-43
Author(s):  
Yu Yang Su ◽  
Kai Ling Liang ◽  
Chyi Ming Leu

Indium phosphide (InP) quantum dots (QDs) with luminescence tunable over the entire visible spectrum were prepared by the conventional hot injection method. InP QDs are considered alternatives to Cadmium containing QDs for application in light-emitting devices because of showing similar optical properties to those containing toxic heavy metals. The multishell coating was shown to improve the photoluminescence quantum yield (QY) of InP QDs more strongly than the conventional ZnS shell coating. QY values were more than 60% along with FWHM of 41-73 nm can be routinely achieved, making the optical performance of InP/ZnS/ZnS or InP/ZnS/SiO2 QDs comparable to that of InP/ZnS QDs. These QDs and the polymer dissolved in the appropriate solvent and deposited by casting to give homogeneous films and showed a good level of dispersion of the QDs within the polymer.


2021 ◽  
Vol 93 ◽  
pp. 106168
Author(s):  
Chunbo Zheng ◽  
Xin Zheng ◽  
Chen Feng ◽  
Songman Ju ◽  
Zhongwei Xu ◽  
...  

2021 ◽  
Vol 21 (7) ◽  
pp. 3795-3799
Author(s):  
Mi-Young Ha ◽  
Chang Kyo Kim ◽  
Dae-Gyu Moon

Zinc oxide nanoparticles (ZnO NPs) have been widely used as an inorganic electron transport layer (ETL) in quantum dot light-emitting devices (QLEDs) due to their excellent electrical properties. Here, we report the effect of ZnO NPs inorganic ETL of different particle sizes on the electrical and optical properties of QLEDs. We synthesized ZnO NPs into the size of 3 nm and 8 nm respectively and used them as an inorganic ETL of QLEDs. The particle size and crystal structure of the synthesized ZnO NPs were verified by Transmission electron microscopy (TEM) analysis and X-ray pattern analysis. The device with 8 nm ZnO NPs ETL exhibited higher efficiency than the 3 nm ZnO NPs ETL device in the single hole transport layer (HTL) QLEDs. The maximum current efficiency of 19.0 cd/A was achieved in the device with 8 nm ZnO NPs layer. We obtained the maximum current efficiency of 17.5 cd/A in 3 nm ZnO NPs device by optimizing bilayer HTL and ZnO NPs ETL.


2019 ◽  
Vol 24 ◽  
pp. 69-93 ◽  
Author(s):  
Zhiwen Yang ◽  
Mengyu Gao ◽  
Weijie Wu ◽  
Xuyong Yang ◽  
Xiao Wei Sun ◽  
...  

2003 ◽  
Vol 4 (2-3) ◽  
pp. 123-130 ◽  
Author(s):  
Seth Coe-Sullivan ◽  
Wing-Keung Woo ◽  
Jonathan S. Steckel ◽  
Moungi Bawendi ◽  
Vladimir Bulović

Nanoscale ◽  
2018 ◽  
Vol 10 (12) ◽  
pp. 5650-5657 ◽  
Author(s):  
Ouyang Wang ◽  
Lei Wang ◽  
Zhaohan Li ◽  
Qiulei Xu ◽  
Qingli Lin ◽  
...  

18% peak external quantum efficiency (EQE) for deep blue QLEDs by using ZnCdS/CdxZn1−xS/ZnS quantum dots.


2021 ◽  
Vol 36 (1) ◽  
pp. 176-186
Author(s):  
Xiao-ya GUAN ◽  
◽  
Hong-zhe WANG ◽  
Huai-bin SHEN ◽  
Zu-liang DU

2019 ◽  
Vol 66 ◽  
pp. 211-215 ◽  
Author(s):  
Haiwei Feng ◽  
Ziwei Yu ◽  
Jiaxin Zhang ◽  
Teng Pan ◽  
Shihao Liu ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document