High-efficiency, deep blue ZnCdS/CdxZn1−xS/ZnS quantum-dot-light-emitting devices with an EQE exceeding 18%

Nanoscale ◽  
2018 ◽  
Vol 10 (12) ◽  
pp. 5650-5657 ◽  
Author(s):  
Ouyang Wang ◽  
Lei Wang ◽  
Zhaohan Li ◽  
Qiulei Xu ◽  
Qingli Lin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Deep Blue

18% peak external quantum efficiency (EQE) for deep blue QLEDs by using ZnCdS/CdxZn1−xS/ZnS quantum dots.

Color tuning of indium phosphide quantum dots for cadmium-free quantum dot light-emitting devices with high efficiency and color saturation

2015 ◽  
Vol 23 (7) ◽  
pp. 285-293 ◽  
Author(s):  
Christian Ippen ◽  
Tonino Greco ◽  
Yohan Kim ◽  
Christopher Pries ◽  
Jiwan Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Indium Phosphide ◽  
High Efficiency ◽  
Color Tuning ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Color Saturation

High-efficiency quantum dot light-emitting diodes employing lithium salt doped poly(9-vinlycarbazole) as a hole-transporting layer

2017 ◽  
Vol 5 (22) ◽  
pp. 5372-5377 ◽  
Author(s):  
Ying-Li Shi ◽  
Feng Liang ◽  
Yun Hu ◽  
Xue-Dong Wang ◽  
Zhao-Kui Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Lithium Salt ◽  
Light Emitting ◽  
Hole Transporting

The maximum external quantum efficiency of the device is 11.46% using PVK doped Li-TFSI as the hole-transporting layer.

Near-infrared light emitting diodes using PbSe quantum dots

RSC Advances ◽  
2015 ◽  
Vol 5 (67) ◽  
pp. 54109-54114 ◽  
Author(s):  
Long Yan ◽  
Xinyu Shen ◽  
Yu Zhang ◽  
Tieqiang Zhang ◽  
Xiaoyu Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Near Infrared ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Light Emitting

The near-infrared light-emitting diodes using PbSe quantum dots were fabricated with the highest external quantum efficiency of 2.52%, which is comparable to those commercial InGaAsP LEDs and visible quantum dot electroluminescence LEDs.

scholarly journals Perovskite Light-Emitting Devices with Doped Hole Transporting Layer

Molecules ◽  
2021 ◽  
Vol 26 (6) ◽  
pp. 1670
Author(s):  
Zhiwei Peng ◽  
Yuhan Gao ◽  
Guohua Xie
Keyword(s):  
Quantum Dots ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Control Device ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Improvement Factor ◽  
Hole Transporting ◽  
Perovskite Quantum Dots

Perovskite quantum dots (PQDs) have drawn global attention in recent years and have been used in a range of semiconductor devices, especially for light-emitting diodes (LEDs). However, because of the nature of low-conductive ligands of PQDs and surface and bulk defects in the devices, charge injection and transport should be carefully managed in order to maximize the electroluminescent performances. In this study, we employed three p-dopants, i.e., 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), 1,3,4,5,7,8-hexafluoro-11,11,12,12-tetracyanonaphtho-2,6-quinodimethane (F6-TCNNQ), and 11,11,12,12-tetracyanonaphtho-2,6-quinodimethane (TCNH14), respectively doped into the commonly used hole transporting layer (HTL) poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA). Compared with the devices with the neat PTAA, those with the doped PTAA as the HTLs achieved the improved electroluminescent performances. In particular, the device with the strong oxidant F4-TCNQ exhibited an improvement factor of 27% in the peak external quantum efficiency compared with the control device with the neat PTAA. The capacitance and transient electroluminescent measurements were carried out to identify the imperceptible interactions in the doped HTL and at the interface between the HTL and PQDs.

The structure optimization of phenanthroimidazole based isomers with external quantum efficiency approaching 7% in non-doped deep-blue OLEDs

2020 ◽  
Vol 8 (9) ◽  
pp. 2975-2984 ◽  
Author(s):  
Jie-Ji Zhu ◽  
Yuwen Chen ◽  
Yong-Hong Xiao ◽  
Xin Lian ◽  
Guo-Xi Yang ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Structure Optimization ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Deep Blue ◽  
Organic Light

In this work, four phenanthroimidazole (PI) based isomers TPA-PPI-PBI, TPA-PPI-NPBI, PBI-PPI-TPA and NPBI-PPI-TPA for high-efficiency deep-blue organic light-emitting diodes (OLEDs) have been designed and synthesized.

Deep-blue fluorescent emitter based on a 9,9-dioctylfluorene bridge with a hybridized local and charge-transfer excited state for organic light-emitting devices with EQE exceeding 8%

2020 ◽  
Vol 8 (40) ◽  
pp. 14117-14124
Author(s):  
Xing Liu ◽  
Wen Liu ◽  
Wu Dongyu ◽  
Xiaozhen Wei ◽  
Long Wang ◽  
...  
Keyword(s):  
Excited State ◽  
Charge Transfer ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Blue Emission ◽  
Emission Peak ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Deep Blue ◽  
Organic Light

The doped device of TPA-DFCP exhibits excellent deep-blue emission with the EL emission peak at 436 nm and the CIE coordinates at (0.153, 0.077), and excellent EL performance with a maximum external quantum efficiency (EQE) of 8.30%.

scholarly journals Pyridinyl-Carbazole Fragments Containing Host Materials for Efficient Green and Blue Phosphorescent OLEDs

Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4615
Author(s):  
Dovydas Blazevicius ◽  
Daiva Tavgeniene ◽  
Simona Sutkuviene ◽  
Ernestas Zaleckas ◽  
Ming-Ruei Jiang ◽  
...  
Keyword(s):  
Current Efficiency ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Power Efficiency ◽  
Triplet Energy ◽  
New Host ◽  
High Brightness ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Host Materials

Pyridinyl-carbazole fragments containing low molar mass compounds as host derivatives H1 and H2 were synthesized, investigated, and used for the preparation of electro-phosphorescent organic light-emitting devices (PhOLEDs). The materials demonstrated high stability against thermal decomposition with the decomposition temperatures of 361–386 °C and were suitable for the preparation of thin amorphous and homogeneous layers with very high values of glass transition temperatures of 127–139 °C. It was determined that triplet energy values of the derivatives are, correspondingly, 2.82 eV for the derivative H1 and 2.81 eV for the host H2. The new derivatives were tested as hosts of emitting layers in blue, as well as in green phosphorescent OLEDs. The blue device with 15 wt.% of the iridium(III)[bis(4,6-difluorophenyl)-pyridinato-N,C2′]picolinate (FIrpic) emitter doping ratio in host material H2 exhibited the best overall characteristics with a power efficiency of 24.9 lm/W, a current efficiency of 23.9 cd/A, and high value of 10.3% of external quantum efficiency at 100 cd/m2. The most efficient green PhOLED with 10 wt% of Ir(ppy)3 {tris(2-phenylpyridine)iridium(III)} in the H2 host showed a power efficiency of 34.1 lm/W, current efficiency of 33.9 cd/A, and a high value of 9.4% for external quantum efficiency at a high brightness of 1000 cd/m2, which is required for lighting applications. These characteristics were obtained in non-optimized PhOLEDs under an ordinary laboratory atmosphere and could be improved in the optimization process. The results demonstrate that some of the new host materials are very promising components for the development of efficient phosphorescent devices.

Air-processed stable near-infrared Si-based perovskite light-emitting devices with efficiency exceeding 7.5%

2022 ◽  
Author(s):  
Xiaoxiao Xu ◽  
Ke Xiao ◽  
Guozhi Hou ◽  
Yu Zhu ◽  
Ting Zhu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Near Infrared ◽  
Ambient Air ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Composite Layers

Two composite layers are used to enhance the efficiency of Si-based near-infrared perovskite light-emitting devices, which are produced in ambient air, and the external quantum efficiency increased to 7.5%.

Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons

2008 ◽  
Vol 20 (16) ◽  
pp. 3100-3104 ◽  
Author(s):  
Beak-Hyun Kim ◽  
Chang-Hee Cho ◽  
Jin-Soo Mun ◽  
Min-Ki Kwon ◽  
Tae-Young Park ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Surface Plasmons ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Localized Surface Plasmons ◽  
Light Emitting ◽  
Silicon Quantum Dot
Sign in / Sign up

Export Citation Format

Share Document