A DFT and PM3 Study of a Hypothetical Silicon-Based σ-Allyl Cation and σ-Allyl Radical and Higher Homologues

2000 ◽  
Vol 2 (20) ◽  
pp. 3059-3062 ◽  
Author(s):  
Leif P. Olson
1991 ◽  
Vol 69 (9) ◽  
pp. 1365-1375 ◽  
Author(s):  
Xinyao Du ◽  
Donald R. Arnold ◽  
Russell J. Boyd ◽  
Zheng Shi

Carbon–carbon bond cleavage of the radical cations of 1-butene [Formula: see text] and 4,4-dimethyl-1-pentene [Formula: see text] will generate the allyl and alkyl radical and carbocation fragments. Alternative bonding arrangements between the allyl and methyl moieties in [Formula: see text] and between the allyl and tert-butyl moieties in [Formula: see text] possible metastable intermediates or transition states preceding complete separation of the fragments, have been investigated by ab initio molecular orbital calculations. Structures were fully optimized at the UHF/6-31G* or UHF/STO-3G levels, and some of the calculations on [Formula: see text] were expanded with single point MP2/6-31G*//UHF/6-31G* computations. The C4H8+ radical cation, having a structure similar to that of 1-butene, is more stable than the separated fragments: 183 kj mol−1 lower in energy than the sum of the energies of the allyl cation and the methyl radical, and 385 kJ mol−1 lower than the sum of the energies of an allyl radical and a methyl cation, at the MP2/6-31G* level. The corresponding values at the UHF/STO-3G level are 276 and 415 kj mol−1, respectively. There is less bonding interaction between the allyl and tert-butyl moieties in [Formula: see text] The summation of the energies of the allyl radical and tert-butyl cation is 123 kj mol−1 lower than the summation of the energies of the allyl cation and tert-butyl radical, and 115 kJ mol−1 higher in energy than the bonded radical cation [Formula: see text] at the UHF/STO-3G level. These calculated values are compared with thermochemical data and with experimental results on the cleavage of these, and related, radical cations. Key words: radical cation, cleavage, ab initio calculations, electron transfer, photochemistry.


1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-861-Pr3-867 ◽  
Author(s):  
S. M. Zemskova ◽  
J. A. Haynes ◽  
K. M. Cooley

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).


1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.


2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.


2009 ◽  
Vol E92-C (5) ◽  
pp. 708-712
Author(s):  
Dong-Heon HA ◽  
Chi Ho HWANG ◽  
Yong Soo LEE ◽  
Hee Chul LEE

2018 ◽  
Vol 42 (1) ◽  
pp. 149-158
Author(s):  
SHUANG XI ◽  
SHUANGSHUANG ZUO ◽  
YING LIU ◽  
YINLONG ZHU ◽  
YUTU YANG ◽  
...  

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