Effect of an MLT dependent electron loss rate on the magnetosphere-ionosphere coupling

ABSTRACTIn this work we examine the development of ion beam modified oxide-nitride-oxide structures formed by low-energy (1 keV) implantation of Si, N and Ar ions (1x1016 ions/cm2) into oxide-nitride gate stacks and subsequent wet-oxidation to form the blocking oxide. Transmission electron microscopy indicates that the thickness of the blocking oxide layer is strongly affected by the implantation process going from 1 nm (non-implanted sample) to 4-5 nm (N and Ar implants) and 7.5 nm (Si implant). The Si implanted stacks exhibit the highest attainable memory window (∼ 8.5 V for a 1 ms pulse regime), which involve both electron and hole storage. In contrast the thinner blocking oxide that develops to the nitrogen and argon implanted stacks limits the memory window which is due only to electron trapping. Room temperature charge retention measurements of the programming state reveal that the electron loss rate is faster in samples implanted with Si than N, allowing for a memory window of 1.7 V and 2.5 V respectively after ten years extrapolation. This retention behavior is mainly attributed to the different nature of the traps generated in the implanted materials.

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Variations in ionospheric D-region recombination properties during increase of its X-ray heating induced by solar X-ray flare

Thermal Science ◽

10.2298/tsci190501313n ◽

2019 ◽

Vol 23 (6 Part B) ◽

pp. 4043-4053

Author(s):

Aleksandra Nina ◽

Vladimir Cadez ◽

Masa Lakićević ◽

Milan Radovanović ◽

Aleksandra Kolarski ◽

...

Keyword(s):

Loss Rate ◽

Radiation Flux ◽

Low Frequency ◽

Recombination Coefficient ◽

Electron Loss ◽

Radio Waves ◽

X Ray ◽

Time Period ◽

Recombination Processes ◽

D Region

In this paper we present an analysis of parameters describing the effective recombination processes in the upper ionospheric D-region in the period of its additional heating by the X-radiation emitted during a solar X-ray flare. We present a procedure for calculation of the effective recombination coefficient and electron loss rate in the period when the X-radiation flux detected by the GOES satellite in the wavelength domain between 0.1 and 0.8 nm increases. The developed procedure is based on observational data obtained in the low ionospheric monitoring by the very low/low frequency radio waves and it is related to the considered area and time period. The obtained expressions are applied to data for the very low frequency signal emitted in Germany and recorded in Serbia during the solar X-ray flare detected by the GOES-14 satellite on May 5, 2010.

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Radio frequency modification of electron loss rate and potential in mirror-confined plasmas

The Physics of Fluids ◽

10.1063/1.866496 ◽

1987 ◽

Vol 30 (10) ◽

pp. 3212 ◽

Cited By ~ 3

Author(s):

P. B. Parks

Keyword(s):

Radio Frequency ◽

Loss Rate ◽

Electron Loss ◽

Confined Plasmas

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Review of Flap Monitoring Technology in 2020

Facial Plastic Surgery ◽

10.1055/s-0040-1721105 ◽

2020 ◽

Vol 36 (06) ◽

pp. 722-726

Author(s):

Adam Jacobson ◽

Oriana Cohen

Keyword(s):

Head And Neck ◽

Free Flap ◽

Loss Rate ◽

Early Recognition ◽

Postoperative Patient ◽

Free Flap Monitoring ◽

Improved Outcomes ◽

Vascular Compromise ◽

Flap Monitoring ◽

Multiple Levels

AbstractAdvances in free flap reconstruction of complex head and neck defects have allowed for improved outcomes in the management of head and neck cancer. Technical refinements have decreased flap loss rate to less than 4%. However, the potential for flap failure exists at multiple levels, ranging from flap harvest and inset to pedicle lay and postoperative patient and positioning factors. While conventional methods of free flap monitoring (reliant on physical examination) remain the most frequently used, additional adjunctive methods have been developed. Herein we describe the various modalities of both invasive and noninvasive free flap monitoring available to date. Still, further prospective studies are needed to compare the various invasive and noninvasive technologies and to propel innovations to support the early recognition of vascular compromise with the goal of even greater rates of flap salvage.

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