scholarly journals Electronically decoupled stacking fault tetrahedra embedded in Au(111) films

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Koen Schouteden ◽  
Behnam Amin-Ahmadi ◽  
Zhe Li ◽  
Dmitry Muzychenko ◽  
Dominique Schryvers ◽  
...  
Keyword(s):  
Stacking Fault ◽  
Stacking Fault Tetrahedra

Contrast From Point Defects in The Infinitesimal Approximation

1980 ◽  
Vol 38 ◽  
pp. 350-351
Author(s):  
L. J. Sykes ◽  
J. J. Hren
Keyword(s):  
Electron Microscope ◽  
Point Defects ◽  
Broad Class ◽  
Stacking Fault ◽  
Crystalline Solids ◽  
Dislocation Loops ◽  
Analytical Expression ◽  
Stacking Fault Tetrahedra

In electron microscope studies of crystalline solids there is a broad class of very small objects which are imaged primarily by strain contrast. Typical examples include: dislocation loops, precipitates, stacking fault tetrahedra and voids. Such objects are very difficult to identify and measure because of the sensitivity of their image to a host of variables and a similarity in their images. A number of attempts have been made to publish contrast rules to help the microscopist sort out certain subclasses of such defects. For example, Ashby and Brown (1963) described semi-quantitative rules to understand small precipitates. Eyre et al. (1979) published a catalog of images for BCC dislocation loops. Katerbau (1976) described an analytical expression to help understand contrast from small defects. There are other publications as well.

Dislocation-Stacking Fault Tetrahedron Interactions in Cu

2002 ◽  
Vol 124 (3) ◽  
pp. 329-334 ◽  
Author(s):  
B. D. Wirth ◽  
V. V. Bulatov ◽  
T. Diaz de la Rubia
Keyword(s):  
Edge Dislocation ◽  
Interatomic Potential ◽  
High Energy ◽  
Dislocation Motion ◽  
Shear Localization ◽  
Stacking Fault ◽  
Dynamics Simulation ◽  
High Energy Particle ◽  
Face Centered Cubic ◽  
Stacking Fault Tetrahedra

In copper and other face centered cubic metals, high-energy particle irradiation produces hardening and shear localization. Post-irradiation microstructural examination in Cu reveals that irradiation has produced a high number density of nanometer sized stacking fault tetrahedra. The resultant irradiation hardening and shear localization is commonly attributed to the interaction between stacking fault tetrahedra and mobile dislocations, although the mechanism of this interaction is unknown. In this work, we present results from a molecular dynamics simulation study to characterize the motion and velocity of edge dislocations at high strain rate and the interaction and fate of the moving edge dislocation with stacking fault tetrahedra in Cu using an EAM interatomic potential. The results show that a perfect SFT acts as a hard obstacle for dislocation motion and, although the SFT is sheared by the dislocation passage, it remains largely intact. However, our simulations show that an overlapping, truncated SFT is absorbed by the passage of an edge dislocation, resulting in dislocation climb and the formation of a pair of less mobile super-jogs on the dislocation.

Direct Transformation of Vacancy Voids to Stacking Fault Tetrahedra

2007 ◽  
Vol 99 (13) ◽  
Author(s):  
B. P. Uberuaga ◽  
R. G. Hoagland ◽  
A. F. Voter ◽  
S. M. Valone
Keyword(s):  
Stacking Fault ◽  
Direct Transformation ◽  
Stacking Fault Tetrahedra

Stacking fault tetrahedra in fatigued stainless steel

1967 ◽  
Vol 15 (4) ◽  
pp. 615-621 ◽  
Author(s):  
O Vingsbo
Keyword(s):  
Stainless Steel ◽  
Stacking Fault ◽  
Stacking Fault Tetrahedra

Observation of ``Dwarf'' Stacking‐Fault Tetrahedra Not Reaching the Surface in Epitaxially Grown Silicon

1966 ◽  
Vol 37 (4) ◽  
pp. 1933-1934 ◽  
Author(s):  
F. J. Wilhelm ◽  
M. L. Joshi
Keyword(s):  
Stacking Fault ◽  
Stacking Fault Tetrahedra

Atomistic simulation of stacking fault tetrahedra formation in Cu

2000 ◽  
Vol 283-287 ◽  
pp. 773-777 ◽  
Author(s):  
B.D Wirth ◽  
V Bulatov ◽  
T Diaz de la Rubia
Keyword(s):  
Atomistic Simulation ◽  
Stacking Fault ◽  
Stacking Fault Tetrahedra

scholarly journals Formation of stacking-fault tetrahedra in aluminum irradiated with high-energy particles at low-temperatures

2004 ◽  
Vol 69 (9) ◽  
Author(s):  
Y. Satoh ◽  
T. Yoshiie ◽  
H. Mori ◽  
M. Kiritani
Keyword(s):  
Low Temperatures ◽  
High Energy ◽  
Stacking Fault ◽  
Stacking Fault Tetrahedra ◽  
High Energy Particles

Correlated Formation and Stability of SIA Loops and Stacking Fault Tetrahedra in High Energy Displacement Cascades in Copper

2005 ◽  
Vol 2 (8) ◽  
pp. 12419 ◽  
Author(s):  
RE Voskoboinikov ◽  
YN Osetsky ◽  
DJ Bacon
Keyword(s):  
High Energy ◽  
Stacking Fault ◽  
Displacement Cascades ◽  
Stacking Fault Tetrahedra

Dynamic Study of Stacking Fault Tetrahedra Induced by Electron Irradiation in Copper Crystals

1982 ◽  
Vol 21 (Part 2, No. 4) ◽  
pp. L235-L236 ◽  
Author(s):  
Hiroshi Fujita ◽  
Takao Sakata ◽  
Hideaki Fukuyo
Keyword(s):  
Electron Irradiation ◽  
Stacking Fault ◽  
Dynamic Study ◽  
Stacking Fault Tetrahedra ◽  
Copper Crystals
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