Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.

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Continuous-wave operation of 489.9 nm blue laser diode at room temperature

Electronics Letters ◽

10.1049/el:19931474 ◽

1993 ◽

Vol 29 (25) ◽

pp. 2194 ◽

Cited By ~ 83

Author(s):

N. Nakayama ◽

S. Itoh ◽

H. Okuyama ◽

M. Ozawa ◽

T. Ohata ◽

...

Keyword(s):

Laser Diode ◽

Room Temperature ◽

Continuous Wave ◽

Blue Laser ◽

Blue Laser Diode ◽

Continuous Wave Operation

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Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature

Chinese Physics Letters ◽

10.1088/0256-307x/25/4/032 ◽

2008 ◽

Vol 25 (4) ◽

pp. 1281-1283 ◽

Cited By ~ 4

Author(s):

Zhang Li-Qun ◽

Zhang Shu-Ming ◽

Yang Hui ◽

Cao Qing ◽

Ji Lian ◽

...

Keyword(s):

Quantum Well ◽

Laser Diode ◽

Room Temperature ◽

Continuous Wave ◽

Quantum Well Laser ◽

Continuous Wave Operation ◽

Multi Quantum Well

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GaAs-based room-temperature continuous-wave 1.59μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.2140614 ◽

2005 ◽

Vol 87 (23) ◽

pp. 231121 ◽

Cited By ~ 33

Author(s):

Z. C. Niu ◽

S. Y. Zhang ◽

H. Q. Ni ◽

D. H. Wu ◽

H. Zhao ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Laser Diode ◽

Room Temperature ◽

Molecular Beam ◽

Continuous Wave ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Laser

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Thermal Impedance and Gain Switching of 1550 nm Room Temperature Continuous-wave Electrically Pumped Laser Diode Monolithically Grown on Silicon

Optical Fiber Communication Conference (OFC) 2020 ◽

10.1364/ofc.2020.t4h.1 ◽

2020 ◽

Author(s):

Bei Shi ◽

Sergio Pinna ◽

Bowen Song ◽

Hongwei Zhao ◽

Jonathan Klamkin

Keyword(s):

Laser Diode ◽

Room Temperature ◽

Continuous Wave ◽

Thermal Impedance ◽

Gain Switching ◽

Electrically Pumped

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Operation and dynamics of ZnSe/ZnMgSSe double heterostructure blue laser diode at room temperature

Applied Physics Letters ◽

10.1063/1.114120 ◽

1995 ◽

Vol 66 (6) ◽

pp. 656-658 ◽

Cited By ~ 28

Author(s):

Hiroyuki Okuyama ◽

Eisaku Kato ◽

Satoshi Itoh ◽

Norikazu Nakayama ◽

Toyoharu Ohata ◽

...

Keyword(s):

Laser Diode ◽

Room Temperature ◽

Blue Laser ◽

Double Heterostructure ◽

Blue Laser Diode

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MODELING, DESIGNING AND STRUCTURAL ANALYSIS OF GAN BLUE LASER DIODE

International Journal of Research in Engineering and Technology ◽

10.15623/ijret.2014.0313006 ◽

2014 ◽

Vol 03 (13) ◽

pp. 26-29

Author(s):

Baby Dhanya S N .

Keyword(s):

Structural Analysis ◽

Laser Diode ◽

Blue Laser ◽

Blue Laser Diode

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Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300001319 ◽

1997 ◽

Vol 2 ◽

Cited By ~ 50

Author(s):

Shuji Nakamura

Keyword(s):

Quantum Well ◽

Carrier Density ◽

Room Temperature ◽

Continuous Wave ◽

Laser Diodes ◽

Gain Coefficient ◽

Threshold Current ◽

Quantum Well Structure ◽

Multi Quantum Well ◽

Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

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