scholarly journals Enhancing infrared emission of mercury telluride (HgTe) quantum dots by plasmonic structures

2020 ◽  
Vol 9 (1) ◽  
Author(s):  
Shaofan Yuan ◽  
Chen Chen ◽  
Qiushi Guo ◽  
Fengnian Xia
Keyword(s):  
Quantum Dots ◽  
Infrared Emission ◽  
Mercury Telluride ◽  
Plasmonic Structures

scholarly journals Extending the Near-Infrared Emission Range of Indium Phosphide Quantum Dots for Multiplexed In Vivo Imaging

Nano Letters ◽  
2021 ◽  
Author(s):  
Alexander M. Saeboe ◽  
Alexey Yu. Nikiforov ◽  
Reyhaneh Toufanian ◽  
Joshua C. Kays ◽  
Margaret Chern ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Indium Phosphide ◽  
In Vivo Imaging ◽  
Near Infrared ◽  
Infrared Emission ◽  
Near Infrared Emission

Chiral Molecule-Enhanced Extinction Ratios of Quantum Dots Coupled to Random Plasmonic Structures

Langmuir ◽  
2018 ◽  
Vol 34 (9) ◽  
pp. 3076-3081 ◽  
Author(s):  
Lior Bezen ◽  
Shira Yochelis ◽  
Dilhara Jayarathna ◽  
Dinesh Bhunia ◽  
Catalina Achim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chiral Molecule ◽  
Plasmonic Structures

Vapour Sensitivity of InP Surface Quantum Dots

2014 ◽  
Vol 605 ◽  
pp. 177-180 ◽  
Author(s):  
Roberta de Angelis ◽  
Mauro Casalboni ◽  
Liliana D’Amico ◽  
Fabio de Matteis ◽  
Fariba Hatami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Near Infrared ◽  
Surface Recombination ◽  
Surface States ◽  
Infrared Emission ◽  
Polar Solvents ◽  
Solvent Type ◽  
Near Infrared Emission ◽  
Inp Surface

We studied the effect of solvent vapours on the photoluminescent emission of self-assembled InP surface quantum dots (SQDs). Their room temperature near infrared emission undergoes a fully reversible intensity enhancement when the dots were exposed to vapours of polar solvents since polar molecules are likely to be adsorbed onto intrinsic surface states and thus reducing non radiative surface recombination. The shape and position of the emission band does not change. The observed effect is dependent on solvent type and concentration with linear law over a limited concentration range.

Near-infrared emission from PbS quantum dots in polymer matrix

2007 ◽  
Vol 3 (5) ◽  
pp. 337-338 ◽  
Author(s):  
Xiao-song Zhang ◽  
Xiao-yi Dong ◽  
Yan-ge Liu ◽  
Gui-yun Kai ◽  
Zhi Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Polymer Matrix ◽  
Near Infrared ◽  
Infrared Emission ◽  
Near Infrared Emission ◽  
Pbs Quantum Dots

scholarly journals Deep Ultraviolet to Near-Infrared Emission and Photoresponse in Layered N-Doped Graphene Quantum Dots

ACS Nano ◽  
2014 ◽  
Vol 8 (6) ◽  
pp. 6312-6320 ◽  
Author(s):  
Libin Tang ◽  
Rongbin Ji ◽  
Xueming Li ◽  
Gongxun Bai ◽  
Chao Ping Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Near Infrared ◽  
Graphene Quantum Dots ◽  
Infrared Emission ◽  
Doped Graphene ◽  
Deep Ultraviolet ◽  
Near Infrared Emission

MOVPE GROWTH OF THE InP BASED MID-IR EMISSION QUANTUM DOT STRUCTURES

2013 ◽  
Vol 01 (02) ◽  
pp. 1350002
Author(s):  
XIAOHONG TANG ◽  
ZONGYOU YIN ◽  
BAOLIN ZHANG
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Infrared Emission ◽  
Emission Wavelength ◽  
Growth Method ◽  
Metal Organic ◽  
Size Uniformity ◽  
Dot Density ◽  
Inas Quantum Dot ◽  
Ir Emission

In this paper, semiconductor quantum dot structures for mid-infrared emission were self-assembled on InP substrate by using metal–organic vapor phase epitaxy growth. The InAs quantum dots grown at different conditions have been investigated. To improve the grown quantum dot's shape, the dot density and the dot size uniformity, a two-step growth method has been used and investigated. By changing the composition of the In x Ga 1-x As matrix layer of the InAs / In x Ga 1-x As / InP quantum dot structure, emission wavelength of the InAs quantum dot structure has been extended to the longest > 2.35 μm measured at 77 K. For the narrower bandgap semiconductor InAsSb quantum dots, the emission wavelength was measured at > 2.8 μm.

scholarly journals Extending the Near Infrared Emission Range of Indium Phosphide Quantum Dots for Multiplexed In Vivo Imaging

2021 ◽  
Author(s):  
Alexander M. Saeboe ◽  
Alexey Y. Nikiforov ◽  
Reyhaneh Toufanian ◽  
Joshua C. Kays ◽  
Margaret Chern ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Indium Phosphide ◽  
Near Infrared ◽  
Infrared Emission ◽  
Full Potential ◽  
Lymph Node Imaging ◽  
Nir Imaging ◽  
Near Infrared Emission ◽  
Tunable Emission

AbstractThis report of the reddest emitting indium phosphide quantum dots (InP QDs) to date demonstrates tunable, near infrared (NIR) photoluminescence and fluorescence multiplexing in the first optical tissue window with a material that avoids toxic constituents. This synthesis overcomes the InP synthesis “growth bottleneck” and extends the emission peak of InP QDs deeper into the first optical tissue window using an inverted QD heterostructure. The ZnSe/InP/ZnS core/shell/shell structure is designed to produce emission from excitons with heavy holes confined in InP shells wrapped around larger-bandgap ZnSe cores and protected by a second shell of ZnS. The InP QDs exhibit InP shell thickness-dependent tunable emission with peaks ranging from 515 – 845 nm. The high absorptivity of InP leads to effective absorbance and photoexcitation of the QDs with UV, visible, and NIR wavelengths in particles with diameters of eight nanometers or less. These nanoparticles extend the range of tunable direct-bandgap emission from InP-based nanostructures, effectively overcoming a synthetic barrier that has prevented InP-based QDs from reaching their full potential as NIR imaging agents. Multiplexed lymph node imaging in a mouse model shows the potential of the NIR-emitting InP particles for in vivo imaging.

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