scholarly journals Emergent properties at oxide interfaces controlled by ferroelectric polarization

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Fan Ye ◽  
Yi Zhang ◽  
Christopher Addiego ◽  
Mingjie Xu ◽  
Huaixun Huyan ◽  
...  
Keyword(s):  
Scanning Transmission Electron Microscopy ◽  
Ferroelectric Materials ◽  
Ferroelectric Polarization ◽  
Emergent Properties ◽  
Oxide Interfaces ◽  
Transmission Electron ◽  
Fundamental Understanding ◽  
Scanning Transmission ◽  
Potential Applications ◽  
Applied Fields

AbstractFerroelectric materials are characterized by the spontaneous polarization switchable by the applied fields, which can act as a “gate” to control various properties of ferroelectric/insulator interfaces. Here we review the recent studies on the modulation of oxide hetero-/homo-interfaces by ferroelectric polarization. We discuss the potential applications of recently developed four-dimensional scanning transmission electron microscopy and how it can provide insights into the fundamental understanding of ferroelectric polarization-induced phenomena and stimulate future computational studies. Finally, we give the outlook for the potentials, the challenges, and the opportunities for the contribution of materials computation to future progress in the area.

Electrical and structural properties of ABO3/SrTiO3 interfaces

2012 ◽  
Vol 1454 ◽  
pp. 167-172 ◽  
Author(s):  
A. Kalabukhov ◽  
T. Claeson ◽  
P.P. Aurino ◽  
R. Gunnarsson ◽  
D. Winkler ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Scanning Transmission Electron Microscopy ◽  
Oxygen Vacancies ◽  
Medium Energy ◽  
Oxide Interfaces ◽  
Ion Spectroscopy ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Cell Layers ◽  
Critical Film Thickness

ABSTRACTElectrical transport and microstructure of interfaces between nm-thick films of various perovskite oxides grown by pulsed laser deposition (PLD) on TiO2- terminated SrTiO3 (STO) substrates are compared. LaAlO3/STO and KTaO3/STO interfaces become quasi-2DEG after a critical film thickness of 4 unit cell layers. The conductivity survives long anneals in oxygen atmosphere. LaMnO3/STO interfaces remain insulating for all film thicknesses and NdGaO3/STO interfaces are conducting but the conductivity is eliminated after oxygen annealing. Medium-energy ion spectroscopy and scanning transmission electron microscopy detect cationic intermixing within several atomic layers from the interface in all studied interfaces. Our results indicate that the electrical reconstruction in the polar oxide interfaces is a complex combination of different mechanisms, and oxygen vacancies play an important role.

Growth behavior and structures of carbon nanotubes

1993 ◽  
Vol 51 ◽  
pp. 752-753
Author(s):  
Mingqi Liu ◽  
John M. Cowley
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Transmission Electron Microscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Arc Discharge ◽  
The Novel ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Potential Applications ◽  
Discharge Method

Recent discovery of the novel hollow graphitic tubules of nanometer dimensions, so called carbon nanotubes, has greatly stimulated the studies in the field of carbon fiber growth. Their potential applications in electronic and materials industries have been suggested. In the present study, carbon nanotubes were fabricated by an arc-discharge method. The microstructures of nanotubes thus obtained were examined with a JEM-2000FX high-resolution transmission electron microscopy (HRTEM) and with an electron nanodiffraction technique in a VG HB-5 scanning transmission electron microscopy (STEM).HRTEM images show that nanotubes, consisting of 3 to 30 carbon sheets, have a length up to 1 μm and a diameter of 6 to 26 nm. Some nanotubes have a symmetric uniform sheet spacing of 0.34 nm. Others show non-symmetric uneven fringes (Fig. 1), indicating that they may have a polyhedral cross section. Most nanotubes are closed by cone-like or polyhedral shaped caps (Figs. 2 and 3). The closure angle varies from 17 to 40° and the internal sheets have a tendency to be closed in pairs. Fig. 4 shows the image of a growing tubes.

Direct evidence of 2H hexagonal Si in Si nanowires

Nanoscale ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 4846-4853 ◽  
Author(s):  
Zhanbing He ◽  
Jean-Luc Maurice ◽  
Qikai Li ◽  
Didier Pribat
Keyword(s):  
Scanning Transmission Electron Microscopy ◽  
Silicon Nanowire ◽  
Chemical Vapor ◽  
Dark Field ◽  
Si Nanowires ◽  
Transmission Electron ◽  
Wide Range ◽  
Scanning Transmission ◽  
Annular Dark Field ◽  
Potential Applications

Hexagonal Si (2H polytype) has attracted great interest because of its unique physical properties and wide range of potential applications. Here, through the use of atomic resolution high-angle annular dark-field scanning transmission electron microscopy, we unambiguously report the coherent intergrowth of diamond cubic (3C polytype) and 2H hexagonal Si in a silicon nanowire grown by chemical vapor deposition.

Fabrication Of Carbon Nanoribbons Via Chemical Treatment Of Carbon Nanotubes And Their Self-Assembling.

2015 ◽  
Vol 1752 ◽  
pp. 71-75
Author(s):  
P. Y. Arquieta Guillén ◽  
Edgar de Casas Ortiz ◽  
Oxana Kharissova
Keyword(s):  
Carbon Nanotubes ◽  
Scanning Transmission Electron Microscopy ◽  
Near Infrared ◽  
Infrared Region ◽  
Medical Field ◽  
Multilayer Carbon Nanotubes ◽  
Self Assembling ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Potential Applications

ABSTRACTSome potential applications of the nanoribbons and nanorods occur in the medical field, using gold nanoribbon therapies against cancer cells because they have absorption in the near infrared region. In this paper, the nanoribbons were obtained by physical-chemical method based on multilayer carbon nanotubes functionalized with carboxylic radical groups (-COOH). The obtained material was characterized by Scanning Transmission Electron Microscopy (STEM) and Infrared Spectroscopy (FTIR). The obtained nanoribbons have a diameter of 320 nm with preferably 126° angle in their morphology.

High-Voltage Scanning Electron Microscopy

1970 ◽  
Vol 28 ◽  
pp. 6-7
Author(s):  
J. M. Cowley
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Wave Optics ◽  
Contrast Effects ◽  
Transmission Electron ◽  
Mode Of Operation ◽  
Scanning Transmission ◽  
Types Of Information ◽  
Voltage Scanning

The comparison of scanning transmission electron microscopy (STEM) with conventional transmission electron microscopy (CTEM) can best be made by means of the Reciprocity Theorem of wave optics. In Fig. 1 the intensity measured at a point A’ in the CTEM image due to emission from a point B’ in the electron source is equated to the intensity at a point of the detector, B, due to emission from a point A In the source In the STEM. On this basis it can be demonstrated that contrast effects In the two types of instrument will be similar. The reciprocity relationship can be carried further to include the Instrument design and experimental procedures required to obtain particular types of information. For any. mode of operation providing particular information with one type of microscope, the analagous type of operation giving the same information can be postulated for the other type of microscope. Then the choice between the two types of instrument depends on the practical convenience for obtaining the required Information.

Imaging and diffraction modes in Scanning Transmission Electron Microscopy

1986 ◽  
Vol 44 ◽  
pp. 684-687
Author(s):  
J. M. Cowley ◽  
R. Glaisher ◽  
J. A. Lin ◽  
H.-J. Ou
Keyword(s):  
Scanning Transmission Electron Microscopy ◽  
High Efficiency ◽  
Fiber Optic ◽  
Image Intensifier ◽  
Detector System ◽  
Detector Plane ◽  
Secondary Electrons ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Special Detector

Some of the most important applications of STEM depend on the variety of imaging and diffraction made possible by the versatility of the detector system and the serial nature, of the image acquisition. A special detector system, previously described, has been added to our STEM instrument to allow us to take full advantage of this versatility. In this, the diffraction pattern in the detector plane may be formed on either of two phosphor screens, one with P47 (very fast) phosphor and the other with P20 (high efficiency) phosphor. The light from the phosphor is conveyed through a fiber-optic rod to an image intensifier and TV system and may be photographed, recorded on videotape, or stored digitally on a frame store. The P47 screen has a hole through it to allow electrons to enter a Gatan EELS spectrometer. Recently a modified SEM detector has been added so that high resolution (10Å) imaging with secondary electrons may be used in conjunction with other modes.

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