scholarly journals Tunable vertical ferroelectricity and domain walls by interlayer sliding in β-ZrI2

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Xiaonan Ma ◽  
Chang Liu ◽  
Wei Ren ◽  
Sergey A. Nikolaev
Keyword(s):  
First Principles ◽  
Domain Walls ◽  
Transition Metal Dichalcogenides ◽  
First Principles Calculations ◽  
Charge Redistribution ◽  
Domain Boundaries ◽  
Metal Dichalcogenides ◽  
Dimensional Electron Gas ◽  
Further Development ◽  
Microscopic Origin

AbstractVertical ferroelectricity where a net dipole moment appears as a result of in-plane ionic displacements has gained enormous attention following its discovery in transition metal dichalcogenides. Based on first-principles calculations, we report on the evidence of robust vertical ferroelectricity upon interlayer sliding in layered semiconducting β-ZrI2, a sister material of polar semimetals MoTe2 and WTe2. The microscopic origin of ferroelectricity in ZrI2 is attributed to asymmetric shifts of electronic charges within a trilayer, revealing a subtle interplay of rigid sliding displacements and charge redistribution down to ultrathin thicknesses. We further investigate the variety of ferroelectric domain boundaries and predict a stable charged domain wall with a quasi-two-dimensional electron gas and a high built-in electric field that can increase electron mobility and electromechanical response in multifunctional devices. Semiconducting behaviour and a small switching barrier of ZrI2 hold promise for various ferroelectric applications, and our results provide important insights for further development of slidetronics ferroelectricity.

Intriguing electronic structures and optical properties of two-dimensional van der Waals heterostructures of Zr2CT2 (T = O, F) with MoSe2 and WSe2

2018 ◽  
Vol 6 (11) ◽  
pp. 2830-2839 ◽  
Author(s):  
Gul Rehman ◽  
S. A. Khan ◽  
B. Amin ◽  
Iftikhar Ahmad ◽  
Li-Yong Gan ◽  
...  
Keyword(s):  
Optical Properties ◽  
Material Properties ◽  
First Principles ◽  
Electronic Structures ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Van Der Waals Heterostructures ◽  
Metal Dichalcogenides

Based on (hybrid) first-principles calculations, material properties (structural, electronic, vibrational, optical, and photocatalytic) of van der Waals heterostructures and their corresponding monolayers (transition metal dichalcogenides and MXenes) are investigated.

scholarly journals An emerging Janus MoSeTe material for potential applications in optoelectronic devices

2019 ◽  
Vol 7 (39) ◽  
pp. 12312-12320 ◽  
Author(s):  
Xiaoyong Yang ◽  
Deobrat Singh ◽  
Zhitong Xu ◽  
Ziwei Wang ◽  
Rajeev Ahuja
Keyword(s):  
First Principles ◽  
Transition Metal Dichalcogenides ◽  
Chemical Properties ◽  
Detailed Comparison ◽  
Physical And Chemical Properties ◽  
First Principles Calculations ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Physical And Chemical ◽  
And Chemical Properties

Motivated by the extraordinary physical and chemical properties of Janus transition-metal dichalcogenides (TMDs) due to the change of the crystal field originating from their asymmetry structures, the electronic and optical properties of the MoSeTe monolayer in 2H and 1T phases are systematically studied by first-principles calculations, and a detailed comparison with the parental MoSe2 and MoTe2 monolayer is made.

Basal plane activation in monolayer MoTe2 for the hydrogen evolution reaction via phase boundaries

2020 ◽  
Vol 8 (37) ◽  
pp. 19522-19532
Author(s):  
Yiqing Chen ◽  
Pengfei Ou ◽  
Xiaohan Bie ◽  
Jun Song
Keyword(s):  
Transition Metal ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
First Principles ◽  
Basal Plane ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Phase Boundaries ◽  
Metal Dichalcogenides

The 2H/1T′ phase boundary activated hydrogen evolution reaction on two-dimensional transition metal dichalcogenides is well studied by comprehensive first-principles calculations.

Nanodots of transition metal dichalcogenides embedded in MoS2 and MoSe2: first-principles calculations

2017 ◽  
Vol 19 (38) ◽  
pp. 26240-26247
Author(s):  
Roberto Hiroki Miwa ◽  
Wanderlã L. Scopel ◽  
Everson S. Souza ◽  
José Eduardo Padilha ◽  
Adalberto Fazzio
Keyword(s):  
Transition Metal ◽  
Magnetic Moment ◽  
First Principles ◽  
Transition Metal Dichalcogenides ◽  
First Principles Calculations ◽  
Graphene Interface ◽  
Metal Dichalcogenides

The formation of a graphene interface with nanodots of NbS2 in MoS2 create a magnetic moment in the ND region.

scholarly journals Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors

2016 ◽  
Vol 113 (31) ◽  
pp. 8583-8588 ◽  
Author(s):  
Di Wu ◽  
Xiao Li ◽  
Lan Luan ◽  
Xiaoyu Wu ◽  
Wei Li ◽  
...  
Keyword(s):  
First Principles ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Edge States ◽  
First Principles Calculations ◽  
Future Improvement ◽  
Metal Dichalcogenides ◽  
Disorder Potential ◽  
2D Crystals

The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for TMD applications in electronics and photonics. Because of the imperfections, electrons moving on these 2D crystals experience a spatially nonuniform Coulomb environment, whose effect on the charge transport has not been microscopically studied. Here, we report the mesoscopic conductance mapping in monolayer and few-layer MoS2 field-effect transistors by microwave impedance microscopy (MIM). The spatial evolution of the insulator-to-metal transition is clearly resolved. Interestingly, as the transistors are gradually turned on, electrical conduction emerges initially at the edges before appearing in the bulk of MoS2 flakes, which can be explained by our first-principles calculations. The results unambiguously confirm that the contribution of edge states to the channel conductance is significant under the threshold voltage but negligible once the bulk of the TMD device becomes conductive. Strong conductance inhomogeneity, which is associated with the fluctuations of disorder potential in the 2D sheets, is also observed in the MIM images, providing a guideline for future improvement of the device performance.

Wrinkle facilitated hydrogen evolution reaction of vacancy-defected transition metal dichalcogenide monolayers

Nanoscale ◽  
2021 ◽  
Author(s):  
Mingjie Pu ◽  
Yufeng Guo ◽  
Wanlin Guo
Keyword(s):  
Hydrogen Production ◽  
Transition Metal ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
First Principles ◽  
Transition Metal Dichalcogenides ◽  
Transition Metal Dichalcogenide ◽  
First Principles Calculations ◽  
Catalytic Activities ◽  
Metal Dichalcogenides

Utilizing transition metal dichalcogenides (TMDs) as catalysts in hydrogen evolution reaction (HER) exhibits a promising prospect for hydrogen production. Here by first-principles calculations we reveal that the catalytic activities of...

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