Coexistence of large conventional and planar spin Hall effect with long spin diffusion length in a low-symmetry semimetal at room temperature

2020 ◽  
Vol 19 (3) ◽  
pp. 292-298 ◽  
Author(s):  
Peng Song ◽  
Chuang-Han Hsu ◽  
Giovanni Vignale ◽  
Meng Zhao ◽  
Jiawei Liu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Room Temperature ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Hall Effect ◽  
Spin Diffusion Length ◽  
Low Symmetry

Determination of the Pt spin diffusion length by spin-pumping and spin Hall effect

2013 ◽  
Vol 103 (24) ◽  
pp. 242414 ◽  
Author(s):  
Wei Zhang ◽  
Vincent Vlaminck ◽  
John E. Pearson ◽  
Ralu Divan ◽  
Samuel D. Bader ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Hall Effect ◽  
Spin Pumping ◽  
Spin Diffusion Length

Spin Pumping in a Ferromagnetic/Nonmagnetic/Spin-Sink Trilayer Film: Spin Current Termination

2012 ◽  
Vol 508 ◽  
pp. 266-270 ◽  
Author(s):  
K. Harii ◽  
Z. Qiu ◽  
T. Iwashita ◽  
Y. Kajiwara ◽  
K. Uchida ◽  
...  
Keyword(s):  
Diffusion Equation ◽  
Hall Effect ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Current ◽  
Interlayer Thickness ◽  
Spin Pumping ◽  
Charge Current ◽  
Inverse Spin Hall Effect ◽  
Spin Diffusion Length

A Spin Current Generated by Spin Pumping in a Ferromagnetic/Nonmagnetic/Spin-Sink Trilayer Film Is Calculated Based on the Spin Pumping Theory and the Standard Spin Diffusion Equation. By Attaching the Spin-Sink Layer, the Injected Spin Current Is Drastically Enhanced when the Interlayer Thickness Is Shorter than the Spin Diffusion Length of the Interlayer. We Also Provided the Formula of the Charge Current which Is Induced from the Pumped Spin Current via the Inverse Spin-Hall Effect.

Room-temperature spin transport in InAs nanowire lateral spin valve

RSC Advances ◽  
2016 ◽  
Vol 6 (79) ◽  
pp. 75736-75740 ◽  
Author(s):  
Zhicheng Wang ◽  
Dong Pan ◽  
Le Wang ◽  
Tingwen Wang ◽  
Bing Zhao ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Transport ◽  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Spintronic Devices ◽  
Spin Diffusion Length ◽  
Nanowire Device ◽  
Large Spin

We report room temperature spin transport in an InAs nanowire device. A large spin signal of 35 kΩ and long spin diffusion length of 1.9 μm are achieved. We believe that these results open a practical way to design InAs NW based spintronic devices.

scholarly journals Charge-to-Spin Interconversion in Low-Symmetry Topological Materials

2021 ◽  
Author(s):  
Marc Vila ◽  
Chuang-Han Hsu ◽  
Jose Garcia Aguilar ◽  
Antonio Benitez ◽  
Xavier Waintal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Figure Of Merit ◽  
Spin Diffusion ◽  
Spin Hall Effect ◽  
Spin Orbit Coupling ◽  
Spintronic Devices ◽  
Canted Spin ◽  
Fermi Contour ◽  
Low Symmetry ◽  
Strong Spin

Abstract The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. Here, we show that the reduced symmetry of strong spin-orbit coupling materials such as MoTe2 or WTe2 enables a new form of canted spin Hall effect (SHE), characterized by large and robust in-plane spin polarizations, which gives rise to an unprecedented charge-to-spin interconversion effect. Through quantum transport calculations on realistic device geometries, including disorder, we found long spin diffusion lengths (λs) and a gate tunable charge-to-spin interconversion efficiency with an upper value reaching θxy ≈ 80%. The SHE figure of merit λsθxy ∼ 1–50 nm, can significantly exceed values of conventional SHE materials, and stems from momentum-invariant (persistent) spin textures together with large spin Berry curvature along the Fermi contour. Specific guidelines for unambiguous experimental confirmation are proposed, paving the way towards exploiting such phenomena in spintronic devices. These findings vividly emphasize how crystal symmetry and band topology can govern the intrinsic SHE, and how they may be exploited to broaden the range and efficiency of spintronic functionalities.

Experimental estimation of the spin diffusion length in undoped p-Ge on Fe3Si using vertical spin-valve devices

2021 ◽  
Vol 129 (1) ◽  
pp. 013901
Author(s):  
A. Yamada ◽  
M. Yamada ◽  
T. Shiihara ◽  
M. Ikawa ◽  
S. Yamada ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Spin Valve ◽  
Experimental Estimation ◽  
Spin Diffusion Length

scholarly journals Self-consistent determination of spin Hall angle and spin diffusion length in Pt and Pd: The role of the interface spin loss

2018 ◽  
Vol 4 (6) ◽  
pp. eaat1670 ◽  
Author(s):  
Xinde Tao ◽  
Qi Liu ◽  
Bingfeng Miao ◽  
Rui Yu ◽  
Zheng Feng ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Diffusion Length ◽  
Self Consistent ◽  
Hall Angle ◽  
Spin Diffusion Length
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