scholarly journals Publisher Correction: Single-photon nonlinearity at room temperature

Nature ◽  
2021 ◽  
Author(s):  
Anton V. Zasedatelev ◽  
Anton V. Baranikov ◽  
Denis Sannikov ◽  
Darius Urbonas ◽  
Fabio Scafirimuto ◽  
...  
Author(s):  
Alberto Bramati ◽  
Stefano Pierini ◽  
Marianna D'Amato ◽  
Mayank Goyal ◽  
Quentin C. Glorieux ◽  
...  

Author(s):  
Siyue Jin ◽  
Xingsheng Xu

In this study, the photostability of a CdTeSe/ZnS colloidal single photon emitter with a wavelength of 800nm at room temperature was investigated. The second-order correlation function was much smaller than 0.1, which proved that the CdTeSe/ZnS single quantum dot at 800nm is a highly pure single-photon emitter. The effects of the irradiation time on the optical properties from single quantum dots were analyzed. As the illumination time increased, the emission of biexciton and multiexciton in the colloidal quantum dots increased, and the occurrence of Auger recombination increased.


2015 ◽  
Vol 10 (8) ◽  
pp. 671-675 ◽  
Author(s):  
Xuedan Ma ◽  
Nicolai F. Hartmann ◽  
Jon K. S. Baldwin ◽  
Stephen K. Doorn ◽  
Han Htoon

2018 ◽  
Vol 924 ◽  
pp. 281-284 ◽  
Author(s):  
Yuta Abe ◽  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Shinobu Onoda ◽  
Moriyoshi Haruyama ◽  
...  

We investigated single photon sources (SPSs) in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by means of confocal microscope techniques. We found SPSsonlyin 4H-SiC/SiO2interface regions of wet-oxide C-face MOSFETs. The other regions of MOSFETs such as source, drain and well did not exhibit SPSs. The luminescent intensity of the SPSs at room temperature was at least twice larger than that of the most famous SPSs, the nitrogen-vacancy center, in diamond. We examined four types of C-face and Si-face 4H-SiC MOSFETs with different oxidation processes, and found that the formation of the SPSs strongly depended on the preparation of SiC/SiO2interfaces.


2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Junfeng Wang ◽  
Yu Zhou ◽  
Ziyu Wang ◽  
Abdullah Rasmita ◽  
Jianqun Yang ◽  
...  

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1663
Author(s):  
Kwang-Yong Jeong ◽  
Seong Won Lee ◽  
Jae-Hyuck Choi ◽  
Jae-Pil So ◽  
Hong-Gyu Park

Efficient integration of a single-photon emitter with an optical waveguide is essential for quantum integrated circuits. In this study, we integrated a single-photon emitter in a hexagonal boron nitride (h-BN) flake with a Ag plasmonic waveguide and measured its optical properties at room temperature. First, we performed numerical simulations to calculate the efficiency of light coupling from the emitter to the Ag plasmonic waveguide, depending on the position and polarization of the emitter. In the experiment, we placed a Ag nanowire, which acted as the plasmonic waveguide, near the defect of the h-BN, which acted as the single-photon emitter. The position and direction of the nanowire were precisely controlled using a stamping method. Our time-resolved photoluminescence measurement showed that the single-photon emission from the h-BN flake was enhanced to almost twice the intensity as a result of the coupling with the Ag nanowire. We expect these results to pave the way for the practical implementation of on-chip nanoscale quantum plasmonic integrated circuits.


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