scholarly journals Tailoring Lattice Strain and Ferroelectric Polarization of Epitaxial BaTiO3 Thin Films on Si(001)

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Jike Lyu ◽  
Ignasi Fina ◽  
Raul Solanas ◽  
Josep Fontcuberta ◽  
Florencio Sánchez
2017 ◽  
Vol 95 (17) ◽  
Author(s):  
Devajyoti Mukherjee ◽  
Mahesh Hordagoda ◽  
David Pesquera ◽  
Dipankar Ghosh ◽  
Jacob L. Jones ◽  
...  

2004 ◽  
Vol 84 (5) ◽  
pp. 777-779 ◽  
Author(s):  
Y. P. Lee ◽  
S. Y. Park ◽  
V. G. Prokhorov ◽  
V. A. Komashko ◽  
V. L. Svetchnikov

2020 ◽  
Vol 2020 ◽  
pp. 1-10
Author(s):  
Panya Khaenamkaew ◽  
Dhonluck Manop ◽  
Chaileok Tanghengjaroen ◽  
Worasit Palakawong Na Ayuthaya

The electrical properties of tin dioxide (SnO2) nanoparticles induced by low calcination temperature were systematically investigated for gas sensing applications. The precipitation method was used to prepare SnO2 powders, while the sol-gel method was adopted to prepare SnO2 thin films at different calcination temperatures. The characterization was done by X-ray diffraction, scanning electron microscopy (SEM), and atomic force microscopy (AFM). The samples were perfectly matched with the rutile tetragonal structure. The average crystallite sizes of SnO2 powders were 45 ± 2, 50 ± 2, 62 ± 2, and 65 ± 2 nm at calcination temperatures of 300, 350, 400, and 450°C, respectively. SEM images and AFM topographies showed an increase in particle size and roughness with the rise in calcination temperature. The dielectric constant decreased with the increase in the frequency of the applied signals but increased on increasing calcination temperature. By using the UV-Vis spectrum, the direct energy bandgaps of SnO2 thin films were found as 4.85, 4.80, 4.75, and 4.10 eV for 300, 350, 400, and 450°C, respectively. Low calcination temperature as 300°C allows smaller crystallite sizes and lower dielectric constants but increases the surface roughness of SnO2, while lattice strain remains independent. Thus, low calcination temperatures of SnO2 are promising for electronic devices like gas sensors.


2017 ◽  
Vol 23 (S1) ◽  
pp. 1604-1605
Author(s):  
Lin-Ze Li ◽  
Lin Xie ◽  
Yi Zhang ◽  
Xiaoxing Cheng ◽  
Zijian Hong ◽  
...  

Author(s):  
Komalika Rani ◽  
Sylvia Matzen ◽  
Stéphane Gable ◽  
Thomas Maroutian ◽  
Guillaume Agnus ◽  
...  

Abstract Ferroelectric thin films are investigated for their potential in photovoltaic (PV) applications, owing to their high open-circuit voltage and switchable photovoltaic effect. The direction of the ferroelectric polarization can control the sign of the photocurrent through the ferroelectric layer, theoretically allowing for 100 percent switchability of the photocurrent with the polarization, which is particularly interesting for photo-ferroelectric memories. However, the quantitative relationship between photocurrent and polarization remains little studied. In this work, a careful investigation of the polarization-dependent photocurrent of epitaxial Pb(Zr,Ti)O3 thin films has been carried out, and has provided a quantitative determination of the unswitchable part of ferroelectric polarization. These results represent a systematic approach to study and optimize the switchability of photocurrent, and more broadly to get important insights on the ferroelectric behavior in all types of ferroelectric layers in which pinned polarization is difficult to investigate.


Sign in / Sign up

Export Citation Format

Share Document