Interface polarization model for a 2-dimensional electron gas at the BaSnO3/LaInO3 interface

Abstract In order to explain the experimental sheet carrier density n2D at the interface of BaSnO3/LaInO3, we consider a model that is based on the presence of interface polarization in LaInO3 which extends over 2 pseudocubic unit cells from the interface and eventually disappears in the next 2 unit cells. Considering such interface polarization in calculations based on 1D Poisson-Schrödinger equations, we consistently explain the dependence of the sheet carrier density of BaSnO3/LaInO3 heterinterfaces on the thickness of the LaInO3 layer and the La doping of the BaSnO3 layer. Our model is supported by a quantitative analysis of atomic position obtained from high resolution transmission electron microscopy which evidences suppression of the octahedral tilt and a vertical lattice expansion in LaInO3 over 2–3 pseudocubic unit cells at the coherently strained interface.

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Investigation of Traps in AlGaN/GaN Heterostructures by Ultrasonic Vibrations

Ukrainian Journal of Physics ◽

10.15407/ujpe66.12.1058 ◽

2021 ◽

Vol 66 (12) ◽

pp. 1058

Author(s):

V.V. Kaliuzhnyi ◽

O.I. Liubchenko ◽

M.D. Tymochko ◽

Y.M. Olikh ◽

V.P. Kladko ◽

...

Keyword(s):

Carrier Density ◽

Electron Gas ◽

Two Dimensional ◽

Ultrasonic Vibrations ◽

Persistent Photoconductivity ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dx Centers ◽

Dimensional Electron Gas

A method of dynamic deformations has been proposed as a useful informative tool in the characterization of transportation properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is found that the exposing of a sample to ultrasonic vibrations results in the persistent acousto-conductivity (PAC) which was observed up to room temperatures. The PAC behaves itself like persistent photoconductivity (PPC), and the carrier density in the 2DEG channel is primarily contributed by the transfer of electrons excited from traps (like DX centers) as a result of their reconstruction under the ultrasonic loading.

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Origin of the Two-Dimensional Electron Gas Carrier Density at theLaAlO3onSrTiO3Interface

Physical Review Letters ◽

10.1103/physrevlett.101.256801 ◽

2008 ◽

Vol 101 (25) ◽

Cited By ~ 333

Author(s):

Zoran S. Popović ◽

Sashi Satpathy ◽

Richard M. Martin

Keyword(s):

Carrier Density ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas

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Ion Damage Studies in GaAs-Algaas Ultra-Narrow Wires

MRS Proceedings ◽

10.1557/proc-144-701 ◽

1988 ◽

Vol 144 ◽

Author(s):

T. L. Cheeks ◽

M. L. Roukes ◽

A. Scherer ◽

B. P. Van Der Gaag ◽

H. G. Craighead

Keyword(s):

Carrier Density ◽

Electron Gas ◽

Low Energy ◽

Charge Carrier Density ◽

Two Dimensional ◽

Dimensional Electron ◽

Electrical Measurements ◽

Two Dimensional Electron Gas ◽

Ion Damage ◽

Dimensional Electron Gas

ABSTRACTLow energy ion damage effects have been investigated in GaAs-A1GaAs two dimensional electron gas (2DEG) materials. The effect of ion mass (He, Ar, Xe) and adsorbed C12 on the charge carrier density and mobility has been studied for ion bombarded 2DEG systems. The 2DEG mobility was significantly reduced by ion damage with the effect becoming more dramatic with smaller ion mass. For the same treatment, the two dimensional carrier density was relatively unaffected. The results of He ion exposure showed serious degradation of the 2DEG with moderate ion dose. Electrical measurements were performed to determine the conducting widths of narrow patterned wires. For the same structural widths (mask width) He defined wires showed smaller electrical widths than Ar milling in the presence of chlorine. Serious limitations to patterning small structures may be imposed using beam processes that include He or other light mass species.

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Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

AIP Advances ◽

10.1063/1.4929772 ◽

2015 ◽

Vol 5 (8) ◽

pp. 087171

Author(s):

H. J. Harsan Ma ◽

S. W. Zeng ◽

A. Annadi ◽

Z. Huang ◽

T. Venkatesan ◽

...

Keyword(s):

Carrier Density ◽

Electron Gas ◽

Two Dimensional ◽

Interface Engineering ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Oxide Interfaces ◽

Dimensional Electron Gas

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High mobile electron gas at LaAlO3/SrTiO3 heterointerface

MRS Proceedings ◽

10.1557/opl.2012.329 ◽

2012 ◽

Vol 1406 ◽

Author(s):

Shanshan Su ◽

Jeong Ho You

Keyword(s):

Electron Gas ◽

Polar Optical Phonon ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Linearized Boltzmann Equation ◽

The Poisson Equation ◽

Scattering Center ◽

Mobile Electron ◽

Unit Cells ◽

Dimensional Electron Gas

ABSTRACTWe calculated the mobility of two-dimensional electron gas along an n-type interface in LaAlO3/SrTiO3 heterostructure using the linearized Boltzmann equation. By solving the Schrödinger equation with the Poisson equation self-consistently, it was found that the interface remained non-conducting up to four unit cells of LaAlO3 film. For five or higher unit cells, the interface became conducting due to the significant overlap between the SrTiO3 conduction band and the LaAlO3 valence band. The electron gas was localized within 7 nm from the interface and multi-subbands were occupied. The calculated mobility matches reasonably well with available experimental data. It was found that the mobility is limited by the remote ionic charged layers in LaAlO3 at low temperature. At high temperature, the polar optical phonon was found to be the dominant scattering center.

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