Monolithic integration of high-voltage thin-film electronics on low-voltage integrated circuits using a solution process

ABSTRACTWe proposed the use of Copper (Cu) and Zinc (Zn) nanoparticles as the electrodes for thin-film microbatteries in the applications of micro-scale sensors. Compared to the widely used lithium-based batteries, Cu and Zn nanoparticles are less expensive, less prone to oxidation (thus involving simpler fabrication steps) and flammability, safe to use, and only requires very simple fabrication processes.Even though the voltage output is inherently smaller (∼1V) than conventional lithium-based batteries, it is sufficient for low-voltage Integrated Circuits (IC) technologies such as 130 nm and 90 nm channel length transistor processes.Commercial paper will be used as the separator to demonstrate the battery capacity. Paper that acts as the separator is slurry-casted with nanoparticles (30-40 nm in size) on both sides. The thickness of the metal nanoparticles-coated thin films and the paper separator are 1 μm and 100 μm, respectively.The electrodes were developed to achieve high conductivity (lower than 1 (Ω·cm)-1) with smooth surface, good adhesion, and flexibility. The metal nanoparticles will be formulated to slurry solutions for screen printing or ink-jet printing for the battery fabrication. For fabrication purposes, the slurries viscosity is approximately in the range of 10-12 cPs at the operating temperature, a surface tension between 28-33 dynes/cm. During the fabrication process including printing/coating and sintering, reductive environment is required to minimize the oxidation. AFM (Atomic Force Microscopy) and EDS (Energy Dispersive Spectroscopy) results will be employed to demonstrate the surface morphology as well as the percentages of metal oxides. Batteries will be tested with and without an ionic liquid for comparison. Humidity effects on the battery performance will also be discussed.Different geometries that are designed to make the batteries with higher voltage or charge will be proposed. Characterization results will include the open-circuit voltage, dielectric property, charging and discharging curve, capacitance and capacity, AFM of the surface test, EDS of the electrodes and the SEM (Scanning Electron microscopy) of the particles.Ourresearch suggest that conductive paper can be scalable and could make high-performance energy storage and conversion devices at low cost and would bring new opportunities for advanced applications.

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A Novel Device Structure for High Voltage, High Performance Amorphous Silicon Thin-Film Transistors

MRS Proceedings ◽

10.1557/proc-424-25 ◽

1996 ◽

Vol 424 ◽

Author(s):

A. M. Miri ◽

P. S. Gudem ◽

S. G. Chamberlain ◽

A. Nathan

Keyword(s):

Thin Film ◽

High Voltage ◽

Thin Film Transistors ◽

High Performance ◽

Low Voltage ◽

Silicon Thin Film ◽

Device Structure ◽

Linear Region ◽

Output Characteristics ◽

Voltage Breakdown

AbstractConventional high voltage thin-film transistors (HVTFTs) suffer from performance limitations such as low on-current, Vx, shift and large curvature in the linear region of the output characteristics. These limitations are associated with the highly resistive dead region in conventional HVTFT structures. In this paper, we present a novel TFT structure which has a high on-current, improved output characteristics in the linear region, and no Vx shift. The higher on-current and significant improvement in output characteristics allows faster switching. Elimination of the Vx shift leads to more reliable circuit operation. The new structure is based on the conventional low voltage TFT (LVTFT) structure except that it does not suffer from low-voltage breakdown. The low-voltage breakdown of the gate nitride in conventional LVTFTs is perceived to be due to spiking of the drain metallization into the underlying layers which creates regions of very high electric field. In our novel structure, a higher breakdown is achieved by locating the metal contacts away from the gate edge while keeping the necessary drain to gate overlap through a heavily doped microcrystalline layer. Therefore, the new TFT extends the same performance as LVTFTs to high voltage operation. Furthermore, this structure also enhances the yield and reliability by minimizing the common faults in TFTs such as short circuits between gate, source and drain.

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Self-assembly of organic channel/polymer dielectric layer in solution process for low-voltage thin-film transistors

Organic Electronics ◽

10.1016/j.orgel.2010.07.020 ◽

2010 ◽

Vol 11 (10) ◽

pp. 1688-1692 ◽

Cited By ~ 21

Author(s):

Ji Hoon Park ◽

Kwang H. Lee ◽

Sung-jin Mun ◽

Gunwoo Ko ◽

Seung Jin Heo ◽

...

Keyword(s):

Thin Film ◽

Self Assembly ◽

Dielectric Layer ◽

Thin Film Transistors ◽

Low Voltage ◽

Solution Process ◽

Polymer Dielectric

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Polysilicon thin film transistors with field-plate-induced drain junction for both high-voltage and low-voltage applications

1990 IEEE SOS/SOI Technology Conference. Proceedings ◽

10.1109/sossoi.1990.145770 ◽

2002 ◽

Cited By ~ 1

Author(s):

T.Y. Huang ◽

I.W. Wu ◽

A.G. Lewis ◽

A. Chiang ◽

R.H. Bruce

Keyword(s):

Thin Film ◽

High Voltage ◽

Thin Film Transistors ◽

Low Voltage ◽

Field Plate

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A Novel Device Structure for High Voltage, High Performance Amorphous Silicon Thin-Film Transistors

MRS Proceedings ◽

10.1557/proc-420-93 ◽

1996 ◽

Vol 420 ◽

Cited By ~ 2

Author(s):

A. M. Miri ◽

P. S. Gudem ◽

S. G. Chamberlain ◽

A. Nathan

Keyword(s):

Thin Film ◽

High Voltage ◽

Thin Film Transistors ◽

High Performance ◽

Low Voltage ◽

Silicon Thin Film ◽

Device Structure ◽

Linear Region ◽

Output Characteristics ◽

Voltage Breakdown

AbstractConventional high voltage thin-film transistors (HVTFTs) suffer from performance limitations such as low on-current, Vx. shift and large curvature in the linear region of the output characteristics. These limitations are associated with the highly resistive dead region in conventional HVTFT structures. In this paper, we present a novel TFT structure which has a high on-current, improved output characteristics in the linear region, and no Vx, shift. The higher on-current and significant improvement in output characteristics allows faster switching. Elimination of the Vx shift leads to more reliable circuit operation. The new structure is based on the conventional low voltage TFT (LVTFT) structure except that it does not suffer from low-voltage breakdown. The low-voltage breakdown of the gate nitride in conventional LVTFTs is perceived to be due to spiking of the drain metallization into the underlying layers which creates regions of very high electric field. In our novel structure, a higher breakdown is achieved by locating the metal contacts away from the gate edge while keeping the necessary drain to gate overlap through a heavily doped microcrystalline layer. Therefore, the new TFT extends the same performance as LVTFTs to high voltage operation. Furthermore, this structure also enhances the yield and reliability by minimizing the common faults in TFTs such as short circuits between gate, source and drain.

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Novel a-Si:H Thin Film High Voltage Transistor

MRS Proceedings ◽

10.1557/proc-70-651 ◽

1986 ◽

Vol 70 ◽

Cited By ~ 21

Author(s):

Hsing C. Tuan

Keyword(s):

Thin Film ◽

High Voltage ◽

Low Voltage ◽

Fabrication Process ◽

New Novel

ABSTRACTA new novel thin film high voltage transistor in a-Si:H is described in this paper. This new structure extends the operation of a-Si:H TFT to 500 volts or more. The fabrication process of this new high voltage transistor is simple and compatible with that of the conventional low voltage TFT. The high voltage TFT can be switched by low voltage signals and is demonstrated to be capable of switching several hundreds of volts.

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Computing Hardware

10.1093/acprof:oso/9780199357789.003.0003 ◽

2018 ◽

Author(s):

James A. Anderson

Keyword(s):

Integrated Circuits ◽

High Voltage ◽

Low Voltage ◽

Computer Hardware ◽

Utility Value ◽

Moore’S Law ◽

Moore's Law ◽

Engineering Problems ◽

Large Virus ◽

Great Simplicity

Digital computers are built from hardware of great simplicity. First, they are built from devices with two states: on or off, one or zero, high voltage or low voltage, or logical TRUE or FALSE. Second, the devices are connected with extremely fine connections, currently on the order of size of a large virus. Their utility, value, and perceived extreme complexity lie in the software controlling them. Different devices have been used to build computers: relays, vacuum tubes, transistors, and integrated circuits. Theoretically, all can run the same software, only slower or faster. More exotic technologies have not proved commercially viable. Digital computer hardware has increased in power by roughly a factor of 2 every 2 years for five decades, an observation called Moore’s Law. Engineering problems with very small devices, such as quantum effects, heat, and difficulty of fabrication, are increasing and may soon end Moore’s Law.

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