A vertical transistor with a sub-1-nm channel

Author(s):  
Jia Zhang ◽  
Feng Gao ◽  
PingAn Hu
Keyword(s):  
2013 ◽  
Vol 14 (11) ◽  
pp. 3052-3060 ◽  
Author(s):  
Yu-Hsin Lin ◽  
Yu-Fan Chang ◽  
Hsin-Fei Meng ◽  
Hsiao-Wen Zan ◽  
Wensyang Hsu ◽  
...  

2014 ◽  
Vol 15 (3) ◽  
pp. 738-742 ◽  
Author(s):  
Ana C.B. Tavares ◽  
José P.M. Serbena ◽  
Ivo A. Hümmelgen ◽  
Michelle S. Meruvia

2009 ◽  
Vol 21 (44) ◽  
pp. 4505-4510 ◽  
Author(s):  
Maryam Moradi ◽  
Arokia Nathan ◽  
Hanna M. Haverinen ◽  
Ghassan E. Jabbour

2015 ◽  
Vol 64 (10) ◽  
pp. 108503
Author(s):  
Yang Dan ◽  
Zhang Li ◽  
Yang Sheng-Yi ◽  
Zou Bing-Suo

Nanoscale ◽  
2019 ◽  
Vol 11 (4) ◽  
pp. 1538-1548 ◽  
Author(s):  
Antonio Di Bartolomeo ◽  
Francesca Urban ◽  
Maurizio Passacantando ◽  
Niall McEvoy ◽  
Lisanne Peters ◽  
...  

We demonstrate a back-gate modulated field-emission current from a WSe2 monolayer and propose a new field-emission vertical transistor concept.


2021 ◽  
Vol 102 (2) ◽  
pp. 147-150
Author(s):  
Rahmat Hadi Saputro ◽  
Ryo Matsumura ◽  
Naoki Fukata

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